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气溶胶辅助化学气相沉积法制备的PbSe纳米结构的阻抗谱分析

Impedance Spectroscopy Analysis of PbSe Nanostructures Deposited by Aerosol Assisted Chemical Vapor Deposition Approach.

作者信息

Iram Sadia, Mahmood Azhar, Ehsan Muhammad Fahad, Mumtaz Asad, Sohail Manzar, Sitara Effat, Mushtaq Shehla, Malik Mohammad Azad, Fatima Syeda Arooj, Shaheen Rubina, Ahmad Nasir Mahmood, Malik Sajid Nawaz

机构信息

School of Natural Sciences, National University of Sciences and Technology, Islamabad 44000, Pakistan.

Department of Materials, University of Manchester, Manchester M13 9PL, UK.

出版信息

Nanomaterials (Basel). 2021 Oct 23;11(11):2817. doi: 10.3390/nano11112817.

Abstract

This research endeavor aimed to synthesize the lead (II) diphenyldiselenophosphinate complex and its use to obtain lead selenide nanostructured depositions and further the impedance spectroscopic analysis of these obtained PbSe nanostructures, to determine their roles in the electronics industry. The aerosol-assisted chemical vapor deposition technique was used to provide lead selenide deposition by decomposition of the complex at different temperatures using the glass substrates. The obtained films were revealed to be a pure cubic phase PbSe, as confirmed by X-ray diffraction analysis. SEM and TEM micrographs demonstrated three-dimensionally grown interlocked or aggregated nanocubes of the obtained PbSe. Characteristic dielectric measurements and the impedance spectroscopy analysis at room temperature were executed to evaluate PbSe properties over the frequency range of 100 Hz-5 MHz. The dielectric constant and dielectric loss gave similar trends, along with altering frequency, which was well explained by the Koops theory and Maxwell-Wagner theory. The effective short-range translational carrier hopping gave rise to an overdue remarkable increase in ac conductivity (σ) on the frequency increase. Fitting of a complex impedance plot was carried out with an equivalent circuit model (R C) (R Q C), which proved that grains, as well as grain boundaries, are responsible for the relaxation processes. The asymmetric depressed semicircle with the center lower to the impedance real axis provided a clear explanation of non-Debye dielectric behavior.

摘要

本研究旨在合成二苯基二硒代次膦酸铅(II)配合物,并利用其制备硒化铅纳米结构沉积物,进而对所得的PbSe纳米结构进行阻抗光谱分析,以确定它们在电子工业中的作用。采用气溶胶辅助化学气相沉积技术,通过在不同温度下使用玻璃基板分解该配合物来提供硒化铅沉积。经X射线衍射分析证实,所得薄膜为纯立方相PbSe。扫描电子显微镜(SEM)和透射电子显微镜(TEM)显微照片显示,所得PbSe呈现三维生长的互锁或聚集纳米立方体。在室温下进行了特征介电测量和阻抗光谱分析,以评估PbSe在100 Hz - 5 MHz频率范围内的性能。介电常数和介电损耗随频率变化呈现相似趋势,这可以用库普斯理论和麦克斯韦 - 瓦格纳理论很好地解释。有效的短程平移载流子跳跃导致交流电导率(σ)随频率增加出现明显的逾期增加。用等效电路模型(R C)(R Q C)对复阻抗图进行拟合,结果表明晶粒以及晶界是弛豫过程的原因。中心低于阻抗实轴的不对称凹陷半圆清楚地解释了非德拜介电行为。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6f9e/8622599/1f1337fe9a88/nanomaterials-11-02817-g001.jpg

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