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通过电沉积法硫化制备黄铁矿薄膜和光电器件。

Fabrication of Iron Pyrite Thin Films and Photovoltaic Devices by Sulfurization in Electrodeposition Method.

作者信息

Lu Zheng, Zhou Hu, Ye Chao, Chen Shi, Ning Jinyan, Halim Mohammad Abdul, Donaev Sardor Burkhanovich, Wang Shenghao

机构信息

Materials Genome Institute, Shanghai University, Shanghai 200444, China.

Department of Materials Science & Engineering, University of Rajshashi, Rajshahi 6205, Bangladesh.

出版信息

Nanomaterials (Basel). 2021 Oct 26;11(11):2844. doi: 10.3390/nano11112844.

DOI:10.3390/nano11112844
PMID:34835609
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8625642/
Abstract

Iron pyrite is a cheap, stable, non-toxic, and earth-abundant material that has great potential in the field of photovoltaics. Electrochemical deposition is a low-cost method, which is also suitable for large-scale preparation of iron pyrite solar cells. In this work, we prepared iron pyrite films by electrochemical deposition with thiourea and explored the effect of sulfurization on the synthesis of high-quality iron pyrite films. Upon sulfurization, the amorphous precursor film becomes crystallized iron pyrite film. Optical and electrical characterization show that its band gap is 0.89 eV, and it is an n type semiconductor with a carrier concentration of 3.01 × 10 cm. The corresponding photovoltaic device shows light response. This work suggests that sulfurization is essential in the electrochemical preparation for fabricating pure iron pyrite films, and therefore for low-cost and large-scale production of iron pyrite solar cells.

摘要

黄铁矿是一种廉价、稳定、无毒且储量丰富的材料,在光伏领域具有巨大潜力。电化学沉积是一种低成本方法,也适用于大规模制备黄铁矿太阳能电池。在这项工作中,我们通过用硫脲进行电化学沉积制备了黄铁矿薄膜,并探索了硫化对高质量黄铁矿薄膜合成的影响。经过硫化,非晶态前驱体薄膜变成了结晶黄铁矿薄膜。光学和电学表征表明,其带隙为0.89电子伏特,是一种载流子浓度为3.01×10的n型半导体。相应的光伏器件表现出光响应。这项工作表明,硫化在电化学制备纯黄铁矿薄膜中至关重要,因此对于低成本大规模生产黄铁矿太阳能电池也至关重要。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8692/8625642/04d411d0c6df/nanomaterials-11-02844-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8692/8625642/5066b4e253d4/nanomaterials-11-02844-g001.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8692/8625642/27deebd4fed1/nanomaterials-11-02844-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8692/8625642/1f07e2d31ac1/nanomaterials-11-02844-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8692/8625642/fe1bef3a69d6/nanomaterials-11-02844-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8692/8625642/7193d6bcad4d/nanomaterials-11-02844-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8692/8625642/bb8bc0fde9e1/nanomaterials-11-02844-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8692/8625642/fb9c22c085a7/nanomaterials-11-02844-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8692/8625642/16ab4bd44925/nanomaterials-11-02844-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8692/8625642/04d411d0c6df/nanomaterials-11-02844-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8692/8625642/5066b4e253d4/nanomaterials-11-02844-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8692/8625642/07f47443f9b7/nanomaterials-11-02844-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8692/8625642/b5ab143fad09/nanomaterials-11-02844-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8692/8625642/27deebd4fed1/nanomaterials-11-02844-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8692/8625642/1f07e2d31ac1/nanomaterials-11-02844-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8692/8625642/fe1bef3a69d6/nanomaterials-11-02844-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8692/8625642/7193d6bcad4d/nanomaterials-11-02844-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8692/8625642/bb8bc0fde9e1/nanomaterials-11-02844-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8692/8625642/fb9c22c085a7/nanomaterials-11-02844-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8692/8625642/16ab4bd44925/nanomaterials-11-02844-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/8692/8625642/04d411d0c6df/nanomaterials-11-02844-g011.jpg

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本文引用的文献

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Adv Mater. 2020 Jul;32(26):e1905653. doi: 10.1002/adma.201905653. Epub 2020 May 19.
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Na-Mediated Stoichiometry Control of FeS Thin Films: Suppression of Nanoscale S-Deficiency and Improvement of Photoresponse.钠介导的 FeS 薄膜化学计量比控制:抑制纳米级 S 缺陷和改善光响应。
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Transport Evidence for Sulfur Vacancies as the Origin of Unintentional n-Type Doping in Pyrite FeS.
硫空位作为黄铁矿FeS中无意n型掺杂起源的输运证据
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