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基于有机卤化锑(III)杂化物的高效发光二极管。

Highly Efficient Light-Emitting Diodes Based on an Organic Antimony(III) Halide Hybrid.

作者信息

Li Jin-Long, Sang Yu-Feng, Xu Liang-Jin, Lu Hai-Yue, Wang Jin-Yun, Chen Zhong-Ning

机构信息

State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China.

Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, China.

出版信息

Angew Chem Int Ed Engl. 2022 Feb 1;61(6):e202113450. doi: 10.1002/anie.202113450. Epub 2021 Nov 27.

Abstract

As low-dimensional lead-free hybrids with higher stability and lower toxicity than those of three-dimensional lead perovskites, organic antimony(III) halides show great application potential in opt-electronic field owing to diverse topologies along with exceptional optical properties. We report herein an antimony(III) hybrid (MePPh ) SbCl with a zero-dimensional (0D) structure, which exhibits brilliant orange emission peaked at 593 nm with near-unity photoluminescent quantum yield (99.4 %). The characterization of photophysical properties demonstrates that the broadband emission with a microsecond lifetime (3.24 μs) arises from self-trapped emission (STE). Electrically driven organic light-emitting diodes (OLEDs) based on neat and doped films of (MePPh ) SbCl were fabricated. The doped devices show significant improvement in comparison to non-doped OLEDs. Owing to the much improved surface morphology and balanced carrier transport in light-emitting layers of doped devices, the peak luminance, current efficiency (CE) and external quantum efficiency (EQE) are boosted from 82 cd m to 3500 cd m , 1.1 cd A to 6.8 cd A , and 0.7 % to 3.1 % relative to non-doped devices, respectively.

摘要

作为比三维铅基钙钛矿具有更高稳定性和更低毒性的低维无铅杂化物,有机锑(III)卤化物由于其多样的拓扑结构以及优异的光学性质,在光电领域展现出巨大的应用潜力。我们在此报告一种具有零维(0D)结构的锑(III)杂化物(MePPh)SbCl,其在593 nm处呈现出明亮的橙色发射峰,光致发光量子产率接近100%(99.4%)。光物理性质表征表明,具有微秒级寿命(3.24 μs)的宽带发射源于自陷激子发射(STE)。基于(MePPh)SbCl的纯膜和掺杂膜制备了电驱动有机发光二极管(OLED)。与未掺杂的OLED相比,掺杂器件有显著改善。由于掺杂器件发光层的表面形貌得到极大改善且载流子传输平衡,相对于未掺杂器件,其峰值亮度、电流效率(CE)和外量子效率(EQE)分别从82 cd m提高到3500 cd m、从1.1 cd A提高到6.8 cd A、从0.7%提高到3.1%。

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