Wu Guangda, Bai Linyu, Yu Pingzhang, Fan Mengdi, Sun Li, Li Yanlu, Yu Fapeng, Wang Zhengping, Zhao Xian
State Key Laboratory of Crystal Materials, Center for Optics Research and Engineering, Shandong University, Jinan 250100, P. R. China.
Key Laboratory of Laser & Infrared System, Shandong University, Ministry of Education, Qingdao 266237, China.
Inorg Chem. 2022 Jan 10;61(1):170-177. doi: 10.1021/acs.inorgchem.1c02561. Epub 2021 Nov 30.
Disordered crystals have attracted immense attention for the generation of ultrashort laser pulses due to their good thermomechanical characteristics and wide emission bandwidths. In this work, a Gd-based orthophosphate crystal, GdSr(PO), (GSP), and a Nd-doped GdSr(PO) crystal, (Nd:GSP), were obtained by the Czochralski method. The crystal structure, optical properties, electronic band structure, laser damage threshold, and hardness of the GSP crystal were comprehensively investigated. It exhibited a disordered structure due to the random distribution of Sr and Gd atoms in the same Wyckoff site, which caused inhomogeneous spectral broadening. Additionally, it exhibited a short UV absorption cutoff edge (<200 nm), a large band gap (5.81 eV), and a high laser damage threshold (∼1850 MW/cm). The spectral properties and Judd-Ofelt calculations of the Nd:GSP crystals were analyzed. A wide absorption band at 803 nm, with a full width at half-maximum value of 20 nm, makes the Nd:GSP crystal suitable for the efficient pumping of AlGaAs laser diodes. Sub-100-fs pulses could be supported by its 25 nm emission bandwidth. Hence, the GSP crystal could be a promising disordered crystal laser matrix.