Wang Ziming, Luo Peng, Han Bing, Zhang Xiang, Zhao Shuqi, Wang Shilei, Chen Xiaohua, Wei Limei, Yang Sijie, Zhou Xing, Wang Shanpeng, Tao Xutang, Zhai Tianyou
State Key Laboratory of Crystal Materials & Institute of Crystal Materials, Shandong University, Jinan 250100, China.
State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China.
ACS Nano. 2021 Dec 28;15(12):20442-20452. doi: 10.1021/acsnano.1c08892. Epub 2021 Dec 3.
In-plane anisotropic two-dimensional (2D) materials, emerging as an intriguing type of 2D family, provide an ideal platform for designing and fabrication of optoelectronic devices. Exploring air-stable and strong in-plane anisotropic 2D materials is still challenging and promising for polarized photodetection. Herein, SiP, a 2D IV-V semiconductor, is successfully prepared and introduced into an in-plane anisotropic 2D family. The basic characterizations combined with theoretical calculations reveal 2D SiP to exhibit an intrinsically low-symmetry structure, the in-plane anisotropy of phonon vibrations, and an anisotropically dispersed band structure. Moreover, the photodetector based on 2D SiP exhibits high performance with a high detectivity of 10 Jones, a large light on/off ratio of 10, a low dark current of 10 A, and a fast response speed of 3 ms. Furthermore, 2D SiP demonstrates a high anisotropic photodetection with an anisotropic ratio up to 2. In addition, the polarization-sensitive photodetector presents a dichroic ratio of 1.6 due to the intrinsic linear dichroism. These good characteristics make 2D SiP a promising candidate as an in-plane anisotropic semiconductor for high-sensitivity and polarized optoelectronic applications.
面内各向异性二维（2D）材料作为一类引人关注的二维材料家族正在兴起，为光电器件的设计与制造提供了一个理想平台。探索空气稳定且具有强面内各向异性的二维材料对于偏振光探测而言仍然具有挑战性但前景广阔。在此，二维IV-V族半导体SiP被成功制备并引入到面内各向异性二维材料家族中。结合理论计算的基础表征揭示出二维SiP具有本征低对称结构、声子振动的面内各向异性以及各向异性色散的能带结构。此外，基于二维SiP的光电探测器表现出高性能，具有10琼斯的高探测率、10的大光开/关比、10 A的低暗电流以及3 ms的快速响应速度。再者，二维SiP展示出高达2的各向异性比的高各向异性光探测。另外，由于本征线性二向色性，偏振敏感光电探测器呈现出1.6的二向色比。这些良好特性使得二维SiP成为用于高灵敏度和偏振光电器件应用的面内各向异性半导体的有潜力候选材料。
