Cong Vo Thanh, Van Son Nguyen, Pham Son Quynh Thai
Faculty of Chemical Engineering, Industrial University of Ho Chi Minh City, Ho Chi Minh City, Vietnam.
J Mol Model. 2021 Dec 22;28(1):12. doi: 10.1007/s00894-021-05011-9.
In this work, we employed continuously the DFT calculations to study CO oxidation reaction on the defective ZnO surface. The oxygen (O) atom was removed from cleaned surface ZnO (CS-ZnO) to form the defective ZnO surface (DS-ZnO), which contained an O vacancy defect. Hereafter, the formation of oxygen vacancy was found to increase the adsorption abilities of O and CO on DS-ZnO, in comparison to those on CS-ZnO. Many steps of elementary reactions including O and CO adsorption, reacting between CO and O to form CO, and CO desorption on DS-ZnO were investigated and calculated in terms of the configurations, activation energy, and reaction energy, to which the reaction pathway of CO oxidation has been found. Based on this pathway, the calculation results of the rate controlling step of 0.84 eV corresponding to the exothermic reaction energy of 4.11 eV on DS-ZnO indicated that the CO oxidation on DS-ZnO was more thermodynamically favorable and less kinetically desirable than that on CS-ZnO. In addition, the natural bonds of O and CO adsorptions on DS-ZnO were also analyzed by the partial density of state (PDOS) and the electron density difference (EDD) contour plots.
在这项工作中,我们持续运用密度泛函理论(DFT)计算来研究缺陷ZnO表面上的CO氧化反应。从清洁后的ZnO表面(CS-ZnO)移除氧(O)原子以形成含有O空位缺陷的缺陷ZnO表面(DS-ZnO)。此后,发现与CS-ZnO相比,氧空位的形成增加了O和CO在DS-ZnO上的吸附能力。根据构型、活化能和反应能,研究并计算了包括O和CO吸附、CO与O反应生成CO₂以及CO在DS-ZnO上脱附等许多基元反应步骤,由此确定了CO氧化的反应途径。基于此途径,DS-ZnO上速率控制步骤的计算结果为0.84 eV,对应放热反应能量为4.11 eV,这表明DS-ZnO上的CO氧化在热力学上比CS-ZnO上更有利,但在动力学上更不理想。此外,还通过态密度(PDOS)和电子密度差(EDD)等高线图分析了O和CO在DS-ZnO上吸附的自然键。