Sun Yu, Chen Jin, Wang Fengchao, Yin Yi, Jin Yan, Wang Jun, Peng Xiaogai, Han Ruiyi, Zhang Canyun, Kong Jinfang, Yang Jing
Shanghai Institute of Technology, College of Sciences, 100 Haiquan Road, Shanghai 201418, China.
State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China.
Nanomaterials (Basel). 2021 Nov 29;11(12):3242. doi: 10.3390/nano11123242.
Nowadays, Mn-doping is considered as a promising dissolution for the heavy usage of toxic lead in CsPbX perovskite material. Interestingly, Mn-doping also introduces an additional photoluminescence band, which is favorable to enrich the emission gamut of this cesium lead halide. Here, a solution spraying strategy was employed for the direct preparation of CsPbMn(Br,Cl) film through MnCl doping in host CsPbBr material. The possible fabrication mechanism of the provided approach and the dependences of material properties on Mn-doping were investigated in detail. As the results shown, Pb was partially substituted by Mn as expected. With the ratio of PbBr:MnCl increasing from 3:0 to 1:1, the obtained film separately featured green, cyan, orange-red and pink-red emission, which was caused by the energy transferring process. Moreover, the combining energy of Cs, Pb, and Mn gradually red-shifted resulted from the formation of Cs-Cl, Pb-Cl and Mn-Br coordination bonding as MnCl doping increased. In addition, the weight of short decay lifetime of prepared samples increased with the doping rising, which indicated a better exciton emission and less defect-related transition. The aiming of current work is to provide a new possibility for the facile preparation of Mn-doping CsPbX film material.
如今，锰掺杂被认为是解决铯铅卤化物（CsPbX）钙钛矿材料中大量使用有毒铅的一种有前景的解决方案。有趣的是，锰掺杂还引入了一个额外的光致发光带，这有利于丰富这种铯铅卤化物的发射色域。在此，采用溶液喷涂策略通过在主体CsPbBr材料中掺杂MnCl直接制备CsPbMn(Br,Cl)薄膜。详细研究了所提供方法可能的制备机理以及材料性能对锰掺杂的依赖性。结果表明，正如预期的那样，铅被锰部分取代。随着PbBr:MnCl的比例从3:0增加到1:1，所得薄膜分别呈现绿色、青色、橙红色和粉红色发射，这是由能量转移过程引起的。此外，随着MnCl掺杂量的增加，由于形成了Cs-Cl、Pb-Cl和Mn-Br配位键，Cs、Pb和Mn的结合能逐渐红移。此外，制备样品的短衰减寿命的权重随着掺杂量的增加而增加，这表明激子发射更好且与缺陷相关的跃迁更少。当前工作的目的是为简便制备锰掺杂的CsPbX薄膜材料提供一种新的可能性。
