Zhang Meng, Dai Hailang, Shang Yuxi, Cao Zhuangqi, Chen Xianfeng
Opt Lett. 2022 Jan 1;47(1):62-65. doi: 10.1364/OL.446431.
To fabricate fine patterns beyond the diffraction limit, a nanostructure photolithography technique is required. In this Letter, we present a method that allows sub-100-nm lines to be patterned photolithographically using ultrahigh-order modes from a symmetrical metal-cladding waveguide (SMCW) in the near field, which are excited by continuous-wave visible light without focusing. The etching depth of the nanopattern reaches more than 200 nm. The localized light intensity distribution can be used to map the photoresist exposure pattern, which agrees well with our theoretical model. This technique opens up the possibility of localizing light fields below the diffraction limit using maskless and lower power visible light.
为了制造超出衍射极限的精细图案，需要一种纳米结构光刻技术。在本信函中，我们展示了一种方法，该方法允许使用来自对称金属包覆波导（SMCW）的近场超高阶模式通过光刻对亚100纳米线进行图案化，这些模式由连续波可见光激发且无需聚焦。纳米图案的蚀刻深度超过200纳米。局部光强分布可用于绘制光刻胶曝光图案，这与我们的理论模型吻合良好。该技术开启了使用无掩模且低功率可见光将光场定位在衍射极限以下的可能性。
