Tokushima Masatoshi, Ushida Jun
Opt Lett. 2022 Jan 1;47(1):162-165. doi: 10.1364/OL.444876.
Optical frequency domain reflectometry (OFDR) is a powerful technique to investigate backscatter in waveguides. However, its use in Si photonics circuits has so far been limited to measuring the propagation loss and group index of a waveguide. We demonstrate that the transmittance (T) and reflectance (R) of elemental devices comprising a Si photonics circuit can be determined by OFDR. An analysis of Si wire waveguides with grating couplers (GCs) is described in detail. The wavelength dependence of T and R of the GCs were determined by using a backscatter model incorporating time-equivalent multiple-reflection paths and were well reproduced by a numerical simulation.