Srivastava Juhi, Gaur Anshu
Department of Materials Science and Engineering, Indian Institute of Technology Kanpur, Kanpur 208016, UP, India and Samtel Centre for Display Technologies, Indian Institute of Technology Kanpur, Kanpur 208016, UP, India.
J Chem Phys. 2021 Dec 28;155(24):244104. doi: 10.1063/5.0077099.
Hybrid carbon nanostructures based on the sp hybridized allotropes of carbon, such as graphene and single-walled carbon nanotubes (SWCNTs), hold vast potential for applications in electronics of various forms. Electronic properties of such hybrid structures are modified due to the interaction between atoms of the components, which can be utilized to tailor the properties of the hybrid structures to suite the application. In this study, we have explored charge (electron) transport through the hybrid structures of single-layer graphene (SLG) and SWCNTs (both metallic and semiconducting) using the nonequilibrium Green's function formalism within the framework of tight-binding density functional theory. Our calculations show that the electronic transport in hybrid nanostructures is affected by the interactions between SWCNT and SLG in comparison to the individual components. The changes in the electronic structure and the transport properties with increasing interaction in hybrids (captured by decreasing the separation between SWCNT and SLG) are discussed, and it is demonstrated from this analysis that the hybrids with semiconducting SWCNTs and metallic SWCNTs show different behavior in the low bias regime while they show similar behavior at higher biases. The difference in the transport properties of hybrids with semiconducting and metallic SWCNTs is explained in terms of changes in the electronic structure, the local density of states, and the energy dispersion for electrons due to the interaction between atoms of the two components.
基于碳的sp杂化同素异形体(如石墨烯和单壁碳纳米管(SWCNT))的混合碳纳米结构在各种形式的电子学中具有巨大的应用潜力。由于各组分原子之间的相互作用,此类混合结构的电子特性会发生改变,这可用于调整混合结构的特性以适应应用需求。在本研究中,我们在紧束缚密度泛函理论框架内,使用非平衡格林函数形式,探究了电荷(电子)通过单层石墨烯(SLG)与SWCNT(包括金属性和半导体性)的混合结构的输运情况。我们的计算表明,与单个组分相比,混合纳米结构中的电子输运受SWCNT与SLG之间相互作用的影响。讨论了随着混合结构中相互作用增强(通过减小SWCNT与SLG之间的间距来体现)电子结构和输运性质的变化,并且从该分析中表明,具有半导体性SWCNT和金属性SWCNT的混合结构在低偏压区域表现出不同行为,而在较高偏压下表现出相似行为。从电子结构、局域态密度以及由于两种组分原子间相互作用导致的电子能量色散的变化方面,解释了具有半导体性和金属性SWCNT的混合结构在输运性质上的差异。