Wu Xiufeng, Shao He, Zhong Yuan, Li Lifang, Chen Wenda, Dong Biao, Xu Lin, Xu Wen, Zhou Donglei, Wu Zhennan, Song Hongwei, Bai Xue
State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, China.
Small. 2022 Mar;18(9):e2106147. doi: 10.1002/smll.202106147. Epub 2022 Jan 5.
The α-CsPbI nanocrystals (NCs) easily transform into yellow non-perovskite, accompanying with declining photoelectric properties that restricting their practical applications in diverse fields. Herein, the highly luminescent and robust α-CsPbI NCs is achieved through engineering the lattice symmetry of perovskite, enabled by the synergistic effect of NO ion passivation and Ca ion doping. The introduced NO ions enhance the phase-change energy barrier and the surface steric hindrance, thus promoting the formation of α-CsPbI NCs with hyper-symmetric crystal structure, while the Ca ion doping contributes to improving their lattice symmetry by significant regulation of the tolerance factor. As a result, the obtained α-CsPbI NCs display an outstanding photoluminescence quantum yield of 96.6%, together with the reduced defect state density and eminent conductivity. Most importantly, the as-engineered α-CsPbI NCs exhibit excellent stability under ambient conditions for 9 months and UV illumination for 32 h. It displays brilliant thermal stability, maintaining luminous intensity for 15 min under 140 °C, and performing desired durability and reversibility, evidenced by 160 °C cyclic test and 120 °C reversibility test. Given enhanced robustness, the as-engineered α-CsPbI NCs based light-emitting-diode devices are constructed, exhibiting a power efficiency of 105.3 lm W and the excellent working stability for 18 h.
α-CsPbI纳米晶体(NCs)很容易转变为黄色的非钙钛矿结构,同时伴随着光电性能的下降,这限制了它们在各种领域的实际应用。在此,通过对钙钛矿晶格对称性进行工程设计,借助NO离子钝化和Ca离子掺杂的协同效应,实现了高发光且稳定的α-CsPbI NCs。引入的NO离子提高了相变能垒和表面空间位阻,从而促进了具有超对称晶体结构的α-CsPbI NCs的形成,而Ca离子掺杂通过显著调节容差因子有助于改善其晶格对称性。结果,所获得的α-CsPbI NCs显示出96.6%的出色光致发光量子产率,同时降低了缺陷态密度并具有显著的导电性。最重要的是,经过工程设计的α-CsPbI NCs在环境条件下9个月以及紫外光照32小时的情况下都表现出优异的稳定性。它显示出出色的热稳定性,在140℃下15分钟内保持发光强度,并通过160℃循环测试和120℃可逆性测试证明具有所需的耐久性和可逆性。鉴于增强的稳定性,构建了基于经过工程设计的α-CsPbI NCs的发光二极管器件,其功率效率为105.3 lm W,并且具有1