College of Environmental Science and Engineering, Tianjin Key Laboratory of Environmental Remediation and Pollution Control, Nankai University, 38 Tongyan Rd., Tianjin 300350, China.
Department of Electronics, Renewable Energy Conversion and Storage Center, Tianjin Key Laboratory of Photo-Electronic Thin Film Device and Technology, Nankai University, Tianjin 300071, China.
ACS Appl Bio Mater. 2021 Jul 19;4(7):5661-5668. doi: 10.1021/acsabm.1c00454. Epub 2021 Jun 23.
With the emergence of antibiotic resistance, the development of efficient antimicrobial agents has become increasingly important. Graphene oxide (GO) has been used as an antibacterial agent, but how to realize and improve the antibacterial properties of GO is still required critically. Herein, we prepared two GO samples, abbreviated as GO-V11 and GO-V9. Positron annihilation spectra showed that they possessed predominantly () and () carbon vacancies, respectively. Their photothermal antibacterial properties were measured against Gram-negative () and Gram-positive () by using colony-forming unit and liquid optical density assays. GO-V9 displayed a higher photothermal antibacterial efficiency toward the two bacteria than GO-V11 because GO-V9 had a higher photothermal conversion efficiency (PTCE) (57.3%) than GO-V11 (42.5%). To reveal the difference in their PTCEs and antibacterial efficiencies, their energy band structures were tested with density functional theory calculations. The different vacancies changed the energy band structure from the indirect band gap of GO-V11 to the quasi-metallic band gap of GO-V9. The quasi-metallic band gap showed the higher PTCE, so we revealed the importance of the band gap of GO for its antibacterial mechanism. Tuning the vacancy properties is promising for improving the photothermal antibacterial efficiency.
随着抗生素耐药性的出现,开发高效的抗菌剂变得越来越重要。氧化石墨烯(GO)已被用作抗菌剂,但如何实现和提高 GO 的抗菌性能仍需要批判性地研究。在此,我们制备了两种 GO 样品,分别缩写为 GO-V11 和 GO-V9。正电子湮没谱表明,它们分别主要具有()和()碳原子空位。通过平板菌落计数和液体光密度法测定了它们对革兰氏阴性()和革兰氏阳性()的光热抗菌性能。GO-V9 对两种细菌的光热抗菌效率均高于 GO-V11,因为 GO-V9 的光热转换效率(PTCE)(57.3%)高于 GO-V11(42.5%)。为了揭示它们的 PTCE 和抗菌效率之间的差异,我们用密度泛函理论计算测试了它们的能带结构。不同的空位使能带结构从 GO-V11 的间接带隙变为 GO-V9 的类金属带隙。类金属带隙表现出更高的 PTCE,因此我们揭示了 GO 的能带结构对其抗菌机制的重要性。调整空位特性有望提高光热抗菌效率。