Dąbrowska Grażyna, Filipek Elżbieta, Tabero Piotr
Department of Inorganic and Analytical Chemistry, Faculty of Chemical Technology and Engineering, West Pomeranian University of Technology in Szczecin, Piastow Ave. 42, 71-065 Szczecin, Poland.
Materials (Basel). 2021 Dec 29;15(1):232. doi: 10.3390/ma15010232.
The results of the study of the three-component system of CuO-VO-TaO oxides showed, inter alia, that in the air atmosphere in one of its cross-sections, i.e., in the CuVO-CuTaO system, a new substitutional solid solution with the general formula CuTaVO and homogeneity range for x > 0.0 and x ≤ 0.3 is formed. The influence of the degree of incorporation of V ions into the CuTaO crystal lattice in place of Ta ions on the unit cell volume, thermal stability and IR spectra of the obtained solid solution was determined. Moreover, the value of the band gap energy of the CuTaVO solid solution was estimated in the range of 0.0 < x ≤ 0.3, and on this basis, the new solid solution was classified as a semiconductor. On the basis of the research results, the studied system of CuO-VO-TaO oxides was also divided into 12 subsidiary subsystems.
对CuO-VO-TaO氧化物三元体系的研究结果表明，尤其在其一个横截面的空气气氛中，即在CuVO-CuTaO体系中，形成了一种通式为CuTaVO且x > 0.0和x ≤ 0.3范围内具有均匀性的新型替代固溶体。确定了V离子取代Ta离子掺入CuTaO晶格的程度对所得固溶体的晶胞体积、热稳定性和红外光谱的影响。此外，在0.0 < x ≤ 0.3范围内估算了CuTaVO固溶体的带隙能量值，并据此将该新型固溶体归类为半导体。基于研究结果，所研究的CuO-VO-TaO氧化物体系还被划分为12个附属子体系。
