Large-Composition-Range Pure-Phase Homogeneous InAsSb Nanowires.

Narrow bandgap InAsSb nanowires show broad prospects for applications in wide spectrum infrared detectors, high-performance transistors, and quantum computation. Realizing such applications requires a fine control of the composition and crystal structure of nanowires. However, the fabrication of large-composition-range pure-phase homogeneous InAsSb nanowires remains a huge challenge. Here, we first report the growth of large-composition-range stemless InAsSb nanowires (0 ≤ ≤ 0.63) on Si (111) substrates by molecular beam epitaxy. We find that pure-phase InAsSb nanowires can be successfully obtained by controlling the antimony content , nanowire diameter, and nanowire growth direction. Detailed energy dispersive spectrum data show that the antimony is uniformly distributed along the axial and radial directions of InAsSb nanowires and no spontaneous core-shell nanostructures form in the nanowires. On the basis of field-effect measurements, we confirm that InAsSb nanowires exhibit good conductivity and their mobilities can reach 4200 cm V s at 7 K. Our work lays the foundation for the development of InAsSb nanowire optoelectronic, electronic, and quantum devices.