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氧取代氢化镧中的室温快速H传导

Room-Temperature Fast H Conduction in Oxygen-Substituted Lanthanum Hydride.

作者信息

Fukui Keiga, Iimura Soshi, Iskandarov Albert, Tada Tomofumi, Hosono Hideo

机构信息

Materials Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama 226-8503, Japan.

PRESTO, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan.

出版信息

J Am Chem Soc. 2022 Feb 2;144(4):1523-1527. doi: 10.1021/jacs.1c11353. Epub 2022 Jan 24.

Abstract

The hydride ion (H) is a unique anionic species that exhibits high reactivity and chemical energy. H conductors are key materials to utilize advantages of H for applications, such as chemical reactors and energy storage systems. However, low H conductivity at room temperature (RT) in current H conductors limit their applications. In this study, we report a H conductivity of ∼1 mS cm at RT, which is higher by 3 orders of magnitude than that of the best conductor, in lightly oxygen-doped lanthanum hydride, LaHO with < 0.25. The oxygen concentration () is crucial in achieving fast H conduction near RT; the low activation barrier of 0.3-0.4 eV is attained for < 0.25, above which it increases to 1.2-1.3 eV. Molecular dynamics simulations using neural-network potential successfully reproduced the observed activation energy, revealing the presence of mobile and immobile H.

摘要

氢离子(H⁻)是一种独特的阴离子物种,具有高反应活性和化学能。氢导体是利用氢的优势用于化学反应器和储能系统等应用的关键材料。然而,当前氢导体在室温下的低氢电导率限制了它们的应用。在本研究中,我们报道了在轻度氧掺杂的氢化镧LaH₁₋ₓOₓ(x < 0.25)中,室温下的氢电导率约为1 mS cm⁻¹,比最佳导体高出3个数量级。氧浓度(x)对于在室温附近实现快速氢传导至关重要;当x < 0.25时,实现了0.3 - 0.4 eV的低活化能垒,高于此值则增加到1.2 - 1.3 eV。使用神经网络势的分子动力学模拟成功再现了观察到的活化能,揭示了存在可移动和不可移动的氢。

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