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基于黑磷的明亮中波红外共振腔发光二极管

Bright Mid-Wave Infrared Resonant-Cavity Light-Emitting Diodes Based on Black Phosphorus.

作者信息

Gupta Niharika, Kim Hyungjin, Azar Nima Sefidmooye, Uddin Shiekh Zia, Lien Der-Hsien, Crozier Kenneth B, Javey Ali

机构信息

Electrical Engineering & Computer Sciences, University of California, Berkeley, Berkeley, California 94720, United States.

Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.

出版信息

Nano Lett. 2022 Feb 9;22(3):1294-1301. doi: 10.1021/acs.nanolett.1c04557. Epub 2022 Jan 24.

Abstract

The mid-wave infrared (MWIR) wavelength range plays a central role in a variety of applications, including optical gas sensing, industrial process control, spectroscopy, and infrared (IR) countermeasures. Among the MWIR light sources, light-emitting diodes (LEDs) have the advantages of simple design, room-temperature operation, and low cost. Owing to the low Auger recombination at high carrier densities and direct bandgap of black phosphorus (bP), it can serve as a high quantum efficiency emitting layer in LEDs. In this work, we demonstrate bP-LEDs exhibiting high external quantum efficiencies and wall-plug efficiencies of up to 4.43 and 1.78%, respectively. This is achieved by integrating the device with an AlO/Au optical cavity, which enhances the emission efficiency, and a thin transparent conducing oxide [indium tin oxide (ITO)] layer, which reduces the parasitic resistance, both resulting in order of magnitude improvements to performance.

摘要

中波红外(MWIR)波长范围在多种应用中发挥着核心作用,包括光学气体传感、工业过程控制、光谱学以及红外(IR)对抗。在MWIR光源中,发光二极管(LED)具有设计简单、室温工作和成本低的优点。由于在高载流子密度下俄歇复合率低以及黑磷(bP)的直接带隙,它可以用作LED中的高量子效率发光层。在这项工作中,我们展示了bP-LED分别表现出高达4.43%和1.78%的高外部量子效率和壁插效率。这是通过将器件与提高发射效率的AlO/Au光学腔以及降低寄生电阻的薄透明导电氧化物[氧化铟锡(ITO)]层集成来实现的,两者都使性能得到了数量级的提升。

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