Wang Junjia, Rousseau Adrien, Yang Mei, Low Tony, Francoeur Sébastien, Kéna-Cohen Stéphane
Department of Engineering Physics, Polytechnique Montréal, Montréal, Québec H3C 3A7, Canada.
Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, United States.
Nano Lett. 2020 May 13;20(5):3651-3655. doi: 10.1021/acs.nanolett.0c00581. Epub 2020 Apr 16.
We demonstrate a mid-infrared light-emitting diode based on the 2D semiconductor black phosphorus (BP). The device is composed of a mechanically exfoliated BP/molybdenum disulfide heterojunction. Under forward bias, it emits polarized electroluminescence at λ = 3.68 μm, with room-temperature internal and external quantum efficiencies of ∼1% and ∼0.03%, respectively. In our structure, outcoupling losses are dominated by radiation toward the high refractive index substrate. The ability to tune the bandgap of BP and consequently its emission wavelength with layer number, strain, and electric field make these LEDs particularly attractive for heterointegration into mid-infrared photonic platforms.
我们展示了一种基于二维半导体黑磷(BP)的中红外发光二极管。该器件由机械剥离的BP/二硫化钼异质结组成。在正向偏压下,它在λ = 3.68μm处发射偏振电致发光,室温下的内量子效率和外量子效率分别约为1%和约0.03%。在我们的结构中,外耦合损耗主要由向高折射率衬底的辐射主导。通过层数、应变和电场来调节BP带隙并进而调节其发射波长的能力,使得这些发光二极管对于异质集成到中红外光子平台特别具有吸引力。