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基于第一性原理对平面外有序TiMoSiB的研究。

Investigation of out-of-plane ordered TiMoSiBfrom first principles.

作者信息

Helmer Pernilla, Lind Hans, Dahlqvist Martin, Rosen Johanna

机构信息

Materials Design Division, Department of Physics, Chemistry and Biology, IFM, Linköping University, 581 83 Linköping, Sweden.

出版信息

J Phys Condens Matter. 2022 Mar 1;34(18). doi: 10.1088/1361-648X/ac51fe.

DOI:10.1088/1361-648X/ac51fe
PMID:35120334
Abstract

The laminated ternary boride MoSiBof T2 structure have two symmetrically inequivalent metallic sites, 16l and 4c, being occupied in a 4:1 ratio. The phase was recently shown to be stable for 80% substitution of Mo for Ti, at the majority site, forming an out-of-plane chemically ordered quaternary boride: TiMoSiB. Considering that the hypothetical TiSiBis theoretically predicted as not stable, a key difference in bonding characteristics is indicated for full substitution of Mo for Ti at the metallic sites. To explore the origin of formation of TiMoSiB, we here investigate the electronic properties and bonding characteristics of MoSiB, TiMoSiBand TiSiBthrough their density of states, projected crystal orbital Hamilton population (pCOHP), Bader charge partitioning and second order force constants. The bond between the two different metallic sites is found to be key to the stability of the compounds, evident from the pCOHP of this bond showing a peak of bonding states close to the Fermi level, which is completely filled in MoSiBand TiMoSiB, while only partially filled in TiSiB. Furthermore, the lower electronegativity of Ti compared to Mo results in charge accumulation at the Si and B sites, which coincides with a reduced bond strength in TiSiBcompared to MoSiBand TiMoSiB. Bandstructure calculations show that all three structures are metallic. The calculated mechanical and elastic properties show reduced bulk () and elastic () moduli when introducing Ti in MoSiB, from 279 and 365 GPa to 176 and 258 GPa, respectively. The Pugh criteria indicates also a slight reduction in ductility, with a/ratio increasing from 0.51 to 0.59.

摘要

具有T2结构的层状三元硼化物MoSiB有两个对称不等价的金属位点,即16l和4c,它们以4:1的比例被占据。最近发现,在多数位点上,该相在Mo被Ti 80%取代时是稳定的,形成了一种面外化学有序的四元硼化物:TiMoSiB。考虑到假设的TiSiB在理论上被预测为不稳定,这表明在金属位点上Mo完全被Ti取代时,键合特性存在关键差异。为了探究TiMoSiB的形成起源,我们在此通过态密度、投影晶体轨道哈密顿布居(pCOHP)、巴德电荷划分和二阶力常数来研究MoSiB、TiMoSiB和TiSiB的电子性质和键合特性。发现两个不同金属位点之间的键是化合物稳定性的关键,从该键的pCOHP可以明显看出,其键合态峰值接近费米能级,在MoSiB和TiMoSiB中该能级完全被填满,而在TiSiB中仅部分被填满。此外,与Mo相比,Ti的电负性较低,导致Si和B位点电荷积累,这与TiSiB中相比MoSiB和TiMoSiB键强降低相吻合。能带结构计算表明,所有三种结构都是金属性的。计算得到的力学和弹性性质表明,在MoSiB中引入Ti时,体模量()和弹性模量()降低,分别从279和365 GPa降至176和258 GPa。普格准则也表明延展性略有降低,/比值从0.51增加到0.59。

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