Wang Mao, Yu Ye, Prucnal Slawomir, Berencén Yonder, Shaikh Mohd Saif, Rebohle Lars, Khan Muhammad Bilal, Zviagin Vitaly, Hübner René, Pashkin Alexej, Erbe Artur, Georgiev Yordan M, Grundmann Marius, Helm Manfred, Kirchner Robert, Zhou Shengqiang
Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden, Germany.
Institute of Semiconductors and Microsystems, Technische Universität Dresden, 01062 Dresden, Germany.
Nanoscale. 2022 Feb 17;14(7):2826-2836. doi: 10.1039/d1nr07274a.
Plasmonic sensing in the infrared region employs the direct interaction of the vibrational fingerprints of molecules with the plasmonic resonances, creating surface-enhanced sensing platforms that are superior to traditional spectroscopy. However, the standard noble metals used for plasmonic resonances suffer from high radiative losses as well as fabrication challenges, such as tuning the spectral resonance positions into mid- to far-infrared regions, and the compatibility issue with the existing complementary metal-oxide-semiconductor (CMOS) manufacturing platform. Here, we demonstrate the occurrence of mid-infrared localized surface plasmon resonances (LSPR) in thin Si films hyperdoped with the known deep-level impurity tellurium. We show that the mid-infrared LSPR can be further enhanced and spectrally extended to the far-infrared range by fabricating two-dimensional arrays of micrometer-sized antennas in a Te-hyperdoped Si chip. Since Te-hyperdoped Si can also work as an infrared photodetector, we believe that our results will unlock the route toward the direct integration of plasmonic sensors with the on-chip CMOS platform, greatly advancing the possibility of mass manufacturing of high-performance plasmonic sensing systems.
红外区域的表面等离子体传感利用分子振动指纹与表面等离子体共振的直接相互作用，创建了优于传统光谱学的表面增强传感平台。然而，用于表面等离子体共振的标准贵金属存在高辐射损耗以及制造挑战，例如将光谱共振位置调谐到中红外和远红外区域，以及与现有的互补金属氧化物半导体（CMOS）制造平台的兼容性问题。在此，我们展示了在超掺杂已知深能级杂质碲的薄硅膜中出现中红外局域表面等离子体共振（LSPR）。我们表明，通过在碲超掺杂硅芯片中制造微米级天线的二维阵列，中红外LSPR可以进一步增强并在光谱上扩展到远红外范围。由于碲超掺杂硅还可以用作红外光电探测器，我们相信我们的结果将开启等离子体传感器与片上CMOS平台直接集成的途径，极大地推进高性能等离子体传感系统大规模制造的可能性。
