Morito Haruhiko, Ikeda Takuji, Katsura Yukari, Yamane Hisanori
Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan.
Research Institute for Chemical Process Technology, National Institute of Advanced Industrial Science and Technology, 4-2-1, Nigatake, Miyagino-ku, Sendai 983-8551, Japan.
Acta Crystallogr E Crystallogr Commun. 2022 Jan 18;78(Pt 2):203-206. doi: 10.1107/S2056989022000494. eCollection 2022 Jan 1.
Single crystals of a novel sodium-magnesium boride silicide, NaMgBSi [ = 10.1630 (3) Å, = 16.5742 (6) Å, space group (No. 166)], were synthesized by heating a mixture of Na, Si and crystalline B with BO flux in Mg vapor at 1373 K. The Mg atoms in the title compound are located at an inter-stitial site of the DyBSi-type structure with an occupancy of 0.5. The (001) layers of B icosa-hedra stack along the -axis direction with shifting in the [-/3, /3, /3] direction. A three-dimensional framework structure of the layers is formed B-Si bonds and {Si} units of [Si]-Si-Si-[Si].
通过在1373K下，于镁蒸气中用硼酸锂（BO）助熔剂加热钠、硅和结晶硼的混合物，合成了一种新型硼化硅钠镁单晶，NaMgBSi [ = 10.1630 (3) Å， = 16.5742 (6) Å，空间群 （编号166）]。标题化合物中的镁原子位于DyBSi型结构的间隙位置，占有率为0.5。硼二十面体的（001）层沿 -轴方向堆叠，并在[-/3, /3, /3]方向上发生位移。通过B-Si键和[Si]-Si-Si-[Si]的{Si}单元形成了层状三维骨架结构。
