Ganea Paul, Socol Gabriel, Zamfira Sorin, Creţu Nicolae, Matei Elena, Lőrinczi Adam
National Institute of Materials Physics, 405A Atomistilor St., RO-077125 Magurele, Romania.
National Institute for Laser, Plasma and Radiation Physics, 409Atomistilor St., RO-077125 Magurele, Romania.
Sensors (Basel). 2022 Feb 2;22(3):1143. doi: 10.3390/s22031143.
The AsS-Cu interface was studied by dielectric spectroscopy measurements on Cu-AsS-Cu thin film heterostructure samples to assess the charge carriers' contribution to the electrical properties of such an interface. Three-dimensional printed masks ensured good reproducibility during the PLD deposition of heterostructure samples. The samples were tested for electrical conductivity and AC photoconductivity by dielectric spectroscopy measurements. DC bias voltages and light were applied to the samples. The electrical capacity of the thin film heterostructure can be modified electrically and optically. We observed long-term photoconductivity with a time dependency that was not exponential, and a quick change of the electrical capacity, indicating the potential of the heterostructure cells as photodetector candidates.
通过对Cu-AsS-Cu薄膜异质结构样品进行介电谱测量,研究了AsS-Cu界面,以评估电荷载流子对该界面电学性质的贡献。三维打印掩膜确保了异质结构样品脉冲激光沉积过程中的良好重现性。通过介电谱测量对样品的电导率和交流光电导率进行了测试。向样品施加直流偏置电压和光。薄膜异质结构的电容可通过电学和光学方式进行调节。我们观察到具有非指数时间依赖性的长期光电导性以及电容的快速变化,这表明异质结构单元作为光探测器候选材料的潜力。