Electric-field-induced second harmonic generation in silicon dioxide.

Electric-field-induced second harmonic generation (EFISH) as a third order nonlinear process is of high practical interest for the realization of functional nonlinear structures. EFISH in materials with vanishing χ and non-zero χ offers huge potential, e.g., for background-free nonlinear electro-optical sampling. In this work, we have investigated SiO as a potential EFISH material for such applications using DC-electric fields. We were able to observe significant second harmonic generation (SHG) in comparison to the background SHG signal. The fundamental excitation at 800 nm results in a SHG signal at 400 nm for high applied DC electric fields, which is a clear indication for EFISH. Additionally, we were are able to precisely model the EFISH signal using time-domain simulations. This numerical approach will be of great importance for efficiency enhancement and prove as a valuable tool for future device design.