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二氧化硅中电场诱导二次谐波产生

Electric-field-induced second harmonic generation in silicon dioxide.

作者信息

Widhalm Alex, Golla Christian, Weber Nils, Mackwitz Peter, Zrenner Artur, Meier Cedrik

出版信息

Opt Express. 2022 Feb 14;30(4):4867-4874. doi: 10.1364/OE.443489.

DOI:10.1364/OE.443489
PMID:35209459
Abstract

Electric-field-induced second harmonic generation (EFISH) as a third order nonlinear process is of high practical interest for the realization of functional nonlinear structures. EFISH in materials with vanishing χ and non-zero χ offers huge potential, e.g., for background-free nonlinear electro-optical sampling. In this work, we have investigated SiO as a potential EFISH material for such applications using DC-electric fields. We were able to observe significant second harmonic generation (SHG) in comparison to the background SHG signal. The fundamental excitation at 800 nm results in a SHG signal at 400 nm for high applied DC electric fields, which is a clear indication for EFISH. Additionally, we were are able to precisely model the EFISH signal using time-domain simulations. This numerical approach will be of great importance for efficiency enhancement and prove as a valuable tool for future device design.

摘要

作为三阶非线性过程的电场诱导二次谐波产生(EFISH)对于实现功能性非线性结构具有很高的实际意义。在χ为零且χ不为零的材料中,EFISH具有巨大潜力,例如用于无背景非线性电光采样。在这项工作中,我们使用直流电场研究了SiO作为此类应用的潜在EFISH材料。与背景二次谐波产生(SHG)信号相比,我们能够观察到显著的SHG。对于高施加直流电场,800 nm处的基波激发在400 nm处产生SHG信号,这是EFISH的明确迹象。此外,我们能够使用时域模拟精确模拟EFISH信号。这种数值方法对于提高效率将非常重要,并证明是未来器件设计的宝贵工具。

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