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阳离子/阴离子双空位对调制的原子级薄硒钴硫纳米片在超低浓度碱性溶液中具有极高的析氧性能

Cation/Anion Dual-Vacancy Pair Modulated Atomically-Thin Se -Co S Nanosheets with Extremely High Water Oxidation Performance in Ultralow-Concentration Alkaline Solutions.

作者信息

Gu Xiangyao, Li Shuangshuang, Shao Wenqian, Mu Xueqin, Yang Yuxin, Ge Yu, Meng Weitao, Liu Guangxiang, Liu Suli, Mu Shichun

机构信息

Key Laboratory of Advanced Functional Materials of Nanjing, Nanjing Xiaozhuang University, Nanjing, 211171, China.

Guangxi Key Laboratory of Low Carbon Energy Materials, Guangxi Normal University, Guilin, 541004, China.

出版信息

Small. 2022 Apr;18(15):e2108097. doi: 10.1002/smll.202108097. Epub 2022 Mar 1.

DOI:10.1002/smll.202108097
PMID:35233940
Abstract

The density functional theory calculation results reveal that the adjacent defect concentration and electronic spin state can effectively activate the Co sites in the atomically thin nanosheets, facilitating the thermodynamic transformation of *O to *OOH, thus offering ultrahigh charge transfer properties and efficiently stabilizing the phase. This undoubtedly evidences that, for metal sulfides, the atom-scale cation/anion vacancy pair and surface electronic spin state can play a great role in enhancing the oxygen evolution reaction. Inspired by the theoretical prediction, interconnected selenium (Se) wired ultrathin Co S (Se -Co S ) nanosheets with Co/S (Se) dual-vacancies (Se -Co S -V -V ) pairs are constructed by a simple approach. As an efficient sulfur host material, in an ultralow-concentration KOH solution (0.1 m), Se -Co S -V -V presents outstanding durability up to 165 h and a low overpotential of 289.5 mV at 10 mA cm , which outperform the commercial Co S nanosheets (NSs) and RuO . Moreover, the turnover frequency of Se -Co S -V -V is 0.00965 s at an overpotential of 0.39 V, which is 5.7 times that of Co S NSs, and 5.8 times that of commercial RuO . The finding offers a rational design strategy to create the multi-defect structure in catalysts toward high-efficiency water electrolysis.

摘要

密度泛函理论计算结果表明,相邻缺陷浓度和电子自旋态能够有效激活原子级薄纳米片中的钴位点,促进O向OOH的热力学转变,从而提供超高的电荷转移性能并有效稳定该相。这无疑证明,对于金属硫化物而言,原子尺度的阳离子/阴离子空位对和表面电子自旋态在增强析氧反应中可发挥重要作用。受理论预测的启发,通过一种简单方法构建了具有钴/硫(硒)双空位(Se-CoS-V-V)对的相互连接的硒(Se)线超薄CoS(Se-CoS)纳米片。作为一种高效的硫主体材料,在超低浓度KOH溶液(0.1 m)中,Se-CoS-V-V在10 mA cm时具有高达165 h的出色耐久性和289.5 mV的低过电位,优于商业CoS纳米片(NSs)和RuO。此外,Se-CoS-V-V在0.39 V过电位下的周转频率为0.00965 s,是CoS NSs的5.7倍,是商业RuO的5.8倍。这一发现为在催化剂中创建多缺陷结构以实现高效水电解提供了合理的设计策略。

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