Zhuk Nadezhda A, Krzhizhanovskaya Maria G, Koroleva Alexandra V, Sekushin Nikolay A, Nekipelov Sergey V, Kharton Vladislav V, Makeev Boris A, Lutoev Vladimir P, Sennikova Yana D
Syktyvkar State University, Oktyabrsky prospect, 55, Syktyvkar 167001, Russia.
Saint Petersburg State University, University Emb. 7/9, 199034 St. Petersburg, Russia.
Inorg Chem. 2022 Mar 14;61(10):4270-4282. doi: 10.1021/acs.inorgchem.1c03053. Epub 2022 Mar 3.
The pyrochlore-type solid-solution formation in a BiMgCuTaO system, synthesized for the first time, is observed at ≤ 0.56. High-temperature X-ray diffraction showed that the pyrochlore phase exists in air up to 1080 °C, where its thermal decomposition leads to the segregation of (Mg,Cu)TaO. The thermal expansion coefficients of the end member, BiMgCuTaO, increase from 3.3 × 10 °C at room temperature up to 8.7 × 10 °C at 930 °C. Rietveld refinement confirmed that the pyrochlore crystal structure is disordered with space group 3̅:2 ( = 8, no. 227). Doping with copper results in a modest expansion of the cubic unit cell, promotes sintering of the ceramic materials, and induces their red-brown color. X-ray photoelectron spectroscopy demonstrated that the states of Bi(III) and Mg(II) are not affected by doping, and the effective charge of tantalum cations is lower than +5, while the Cu(II) states coexist with Cu(I). The electron spin resonance spectra display a single line with = 2.2, ascribed to the dipole-broadened Cu signal. The dielectric permittivity of BiMgCuTaO ceramics may achieve up to ∼10, with the dielectric loss tangent varying in the range from 0.2 up to 12. Multiple dielectric relaxations are found at room temperature and above for all samples.
首次合成的BiMgCuTaO体系中,在≤0.56时观察到烧绿石型固溶体的形成。高温X射线衍射表明,烧绿石相在空气中存在至1080℃,在此温度下其热分解导致(Mg,Cu)TaO的偏析。端元BiMgCuTaO的热膨胀系数从室温下的3.3×10℃增加到930℃时的8.7×10℃。Rietveld精修证实烧绿石晶体结构无序,空间群为3̅:2( = 8, no. 227)。铜掺杂导致立方晶胞适度膨胀,促进陶瓷材料烧结,并使其呈现红棕色。X射线光电子能谱表明,Bi(III)和Mg(II)的状态不受掺杂影响,钽阳离子的有效电荷低于+5,而Cu(II)状态与Cu(I)共存。电子自旋共振谱显示一条g = 2.2的单线,归因于偶极展宽的Cu信号。BiMgCuTaO陶瓷的介电常数可达~10,介电损耗正切在0.2至12范围内变化。在室温及以上温度下,所有样品均发现多个介电弛豫。