Suppr超能文献

中间半导体TiO薄膜对纳米颗粒介导的电子转移的影响:CO的电氧化

Effect of Intermediate Semiconducting TiO Thin Films on Nanoparticle-Mediated Electron Transfer: Electrooxidation of CO.

作者信息

Galyamova Aigerim, Crooks Richard M

机构信息

Department of Chemistry, Center for Electrochemistry, Texas Materials Institute, The University of Texas at Austin, 105 E. 24th St., Stop A5300, Austin, TX 78712-1224, USA.

出版信息

Nanomaterials (Basel). 2022 Mar 3;12(5):855. doi: 10.3390/nano12050855.

Abstract

The concept of nanoparticle-mediated electron transfer (eT) across insulating thin films was elucidated theoretically by Allongue and Chazalviel in 2011. In their model, metal nanoparticles (NPs) are immobilized atop passivating, self-assembled monolayers (SAMs). They found that under certain conditions, related to the thickness of the SAM and the size of the NPs, efficient faradaic oxidation and reduction reactions could proceed at the NP surface. In the absence of NPs, however, eT was suppressed by the insulating SAM thin films. Allongue and Chazalviel concluded that, within certain bounds, eT is mediated by fast tunneling between the conductive electrode and the metal NPs, while the kinetics of the redox reaction are controlled by the NPs. This understanding has been confirmed using a variety of experimental models. The theory is based on electron tunneling; therefore, the nature of the intervening medium (the insulator in prior studies) should not affect the eT rate. In the present manuscript, however, we show that the theory breaks down under certain electrochemical conditions when the medium between conductors is an -type semiconductor. Specifically, we find that in the presence of either Au or Pt NPs immobilized on a thin film of TiO, CO electrooxidation does not proceed. In contrast, the exact same systems lead to the efficient reduction of oxygen. At present, we are unable to explain this finding within the context of the model of Allongue and Chazalviel.

摘要

2011年,阿隆格和沙扎维耶从理论上阐明了纳米颗粒介导的电子转移(eT)穿过绝缘薄膜的概念。在他们的模型中,金属纳米颗粒(NPs)固定在钝化的自组装单分子层(SAMs)顶部。他们发现,在某些与SAM厚度和NPs尺寸相关的条件下,NP表面可以进行有效的法拉第氧化和还原反应。然而,在没有NPs的情况下,eT被绝缘的SAM薄膜抑制。阿隆格和沙扎维耶得出结论,在一定范围内,eT是由导电电极和金属NPs之间的快速隧穿介导的,而氧化还原反应的动力学则由NPs控制。这一认识已通过各种实验模型得到证实。该理论基于电子隧穿;因此,中间介质(先前研究中的绝缘体)的性质不应影响eT速率。然而,在本论文中,我们表明,当导体之间的介质是n型半导体时,该理论在某些电化学条件下会失效。具体而言,我们发现,在固定在TiO薄膜上的Au或Pt NPs存在的情况下,CO电氧化不会发生。相反,完全相同的体系会导致氧气的有效还原。目前,我们无法在阿隆格和沙扎维耶的模型框架内解释这一发现。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bc79/8912720/2aa3cde9a03e/nanomaterials-12-00855-sch001.jpg

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验