Gan Zihan, Yin Junyi, Xu Xin, Cheng Yonghong, Yu Ting
State Key Laboratory of Electrical Insulation and Power Equipment, Center of Nanomaterials for Renewable Energy, School of Electrical Engineering, Xi'an Jiaotong University, Xi'an 710049, P.R. China.
School of Physics and Technology, Wuhan University, Wuhan 430072, P.R. China.
ACS Nano. 2022 Apr 26;16(4):5131-5152. doi: 10.1021/acsnano.2c00557. Epub 2022 Mar 16.
The drastic need for development of power and electronic equipment has long been calling for energy storage materials that possess favorable energy and power densities simultaneously, yet neither capacitive nor battery-type materials can meet the aforementioned demand. By contrast, pseudocapacitive materials store ions through redox reactions with charge/discharge rates comparable to those of capacitors, holding the promise of serving as electrode materials in advanced electrochemical energy storage (EES) devices. Therefore, it is of vital importance to enhance pseudocapacitive responses of energy storage materials to obtain excellent energy and power densities at the same time. In this Review, we first present basic concepts and characteristics about pseudocapacitive behaviors for better guidance on material design researches. Second, we discuss several important and effective material design measures for boosting pseudocapacitive responses of materials to improve rate capabilities, which mainly include downsizing, heterostructure engineering, adding atom and vacancy dopants, expanding interlayer distance, exposing active facets, and designing nanosheets. Finally, we outline possible developing trends in the rational design of pseudocapacitive materials and EES devices toward high-performance energy storage.
长期以来,对电力和电子设备发展的迫切需求一直呼唤着同时具备良好能量密度和功率密度的储能材料,然而电容型材料和电池型材料都无法满足上述需求。相比之下,赝电容材料通过氧化还原反应存储离子,其充放电速率与电容器相当,有望成为先进电化学储能(EES)设备中的电极材料。因此,增强储能材料的赝电容响应以同时获得优异的能量密度和功率密度至关重要。在本综述中,我们首先介绍赝电容行为的基本概念和特性,以便为材料设计研究提供更好的指导。其次,我们讨论了几种重要且有效的材料设计措施,以提高材料的赝电容响应从而改善倍率性能,主要包括减小尺寸、异质结构工程、添加原子和空位掺杂剂、扩大层间距、暴露活性面以及设计纳米片。最后,我们概述了赝电容材料和EES设备合理设计朝着高性能储能发展的可能趋势。