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磁场下Janus黑砷磷AsP量子点的电学和光学性质

Electronic and optical properties of Janus black arsenic-phosphorus AsP quantum dots under magnetic field.

作者信息

Yan Xuefei, Ke Qingqing, Cai Yongqing

机构信息

Institute of Applied Physics and Materials Engineering, University of Macau, People's Republic of China.

School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai 519082, People's Republic of China.

出版信息

Nanotechnology. 2022 Apr 7;33(26). doi: 10.1088/1361-6528/ac6007.

Abstract

By utilizing the tight-binding method, the electronic spectrum and states distribution of square Janus monolayer black arsenic phosphorus (b-AsP) quantum dots (QDs) in the presence of a perpendicular magnetic field are explored. Strong in-gap states of b-AsP QDs, whose probability densities are distributed on the armchair boundary (armchair edge states) appear in the energy gap of host perfect two-dimensional b-AsP. The corresponding energy levels of the armchair edge states can degenerate to the Landu energy levels upon applying a perpendicular magnetic field. When an in-plane polarized light is introduced, due to the presence of armchair edge states, the edge-to-edge transitions are mainly induced from the armchair edge (hole) states to zigzag edge (electron) states. The optical absorption undergoes blue shift as a function of the magnetic field. Our work suggests tunable optical properties via modulating the armchair edge states of a b-AsP QD and provides a theoretical basis for the design of b-AsP-based optoelectronic devices.

摘要

通过利用紧束缚方法,研究了方形Janus单层黑砷磷(b-AsP)量子点(QD)在垂直磁场存在下的电子光谱和态分布。b-AsP量子点的强能隙态,其概率密度分布在扶手椅边界(扶手椅边缘态),出现在主体完美二维b-AsP的能隙中。施加垂直磁场时,扶手椅边缘态的相应能级可简并为朗道能级。当引入面内偏振光时,由于存在扶手椅边缘态,边到边跃迁主要由扶手椅边缘(空穴)态诱导至锯齿边缘(电子)态。光吸收随磁场发生蓝移。我们的工作表明通过调制b-AsP量子点的扶手椅边缘态可实现可调谐光学性质,并为基于b-AsP的光电器件设计提供了理论基础。

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