Chen Haohao, Zhao Junlei, Wang Xinyu, Chen Xiaolong, Zhang Zhaofu, Hua Mengyuan
Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China.
Department of Engineering, University of Cambridge, Cambridge CB2 1PZ, UK.
Nanoscale. 2022 Apr 7;14(14):5551-5560. doi: 10.1039/d2nr00466f.
Two-dimensional van der Waals heterostructures with strong intrinsic ferroelectrics are highly promising for novel devices with designed electronic properties. The polarization reversal transition of the 2D ferroelectric GaO monolayer offers a new approach to tune the photocatalytic and electrical properties of MoS/GaO heterogeneous bilayers. In this work, we study MoS/GaO heterogeneous bilayers with different intrinsic polarization using hybrid-functional calculations. We closely investigate the structural, electronic and optical properties of two stable stacking configurations with opposite polarization. The results reveal a distinct switch from type-I to type-II heterostructures owing to polarization reversal transition of the 2D ferroelectric GaO monolayer. Biaxial strain engineering leads to type-I-to-II and type-II-to-III transitions in the two polarized models, respectively. Intriguingly, one of the MoS/GaO heterolayers has a larger spatial separation of the valence and conduction band edges and excellent optical absorption ranging from infrared to ultraviolet region under biaxial strain, thus ensuring promising novel applications such as flexible electrical and optical devices. Based on the highly tunable physical properties of the bilayer heterostructures, we further explore their potential applications, such as photocatalytic water splitting and field-controlled switch channel in MOSFET devices.
具有强本征铁电体的二维范德华异质结构对于具有设计电子特性的新型器件极具前景。二维铁电体GaO单层的极化反转转变为调节MoS/GaO异质双层的光催化和电学性质提供了一种新方法。在这项工作中,我们使用杂化泛函计算研究了具有不同本征极化的MoS/GaO异质双层。我们仔细研究了具有相反极化的两种稳定堆叠构型的结构、电子和光学性质。结果表明,由于二维铁电体GaO单层的极化反转转变,发生了从I型到II型异质结构的明显转变。双轴应变工程分别在两种极化模型中导致了从I型到II型和从II型到III型的转变。有趣的是,其中一种MoS/GaO异质层在双轴应变下具有更大的价带和导带边缘空间分离以及从红外到紫外区域的优异光吸收,从而确保了在柔性电气和光学器件等方面有前景的新应用。基于双层异质结构高度可调的物理性质,我们进一步探索了它们的潜在应用,如光催化水分解和MOSFET器件中的场控开关通道。