Electronic properties and enhanced photocatalytic performance of van der Waals heterostructures of ZnO and Janus transition metal dichalcogenides.

Vertical stacking of two-dimensional materials into layered van der Waals heterostructures has recently been considered as a promising candidate for photocatalytic and optoelectronic devices because it can combine the advantages of the individual 2D materials. Janus transition metal dichalcogenides (JTMDCs) have emerged as an appealing photocatalytic material due to the desirable electronic properties. Hence, in this work, we systematically investigate the geometric features, electronic properties, charge density difference, work function, band alignment and photocatalytic properties of ZnO-JTMDC heterostructures using first-principles calculations. Due to the different kinds of chalcogen atoms on both sides of JTMDC monolayers, two different possible stacking patterns of ZnO-JTMDC heterostructures have been constructed and considered. We find that all these stacking patterns of ZnO-JTMDC heterostructures are dynamically and energetically feasible. Moreover, both ZnO-MoSSe and ZnO-WSSe heterostructures are indirect band gap semiconductors and present type-I and type-II band alignments for model-I and model-II, respectively. The Rashba spin polarization of the ZnO-WSSe heterostructure for model-I is greater than that in the others. Furthermore, valence (conduction) band edge potentials are calculated to understand the photocatalytic behavior of these systems. Energetically favorable band edge positions in ZnO-Janus heterostructures make them suitable for water splitting at zero pH. We found that the ZnO-Janus heterostructures are promising candidates for water splitting with conduction and valence band edges positioned just outside of the redox interval.