Jana Santanu, Martins Rodrigo, Fortunato Elvira
CENIMAT/i3N, Departamento de Ciência dos Materiais, Faculdade de Ciências e Tecnologia-Universidade Nova de Lisboa and CEMOP/Uninova, Campus de Caparica, 2829-516 Caparica, Portugal.
Nano Lett. 2022 Apr 13;22(7):2780-2785. doi: 10.1021/acs.nanolett.1c04822. Epub 2022 Mar 28.
Here, we report an exceptional feature of the one-dimensional threadlike assemblies of a four-monolayer colloidal CdSe nanoplatelet (NPL)-based thin-film transistor. A series of different lengths of threads (200-1200 nm) was used as an active n channel in thin-film transistors (TFTs) to understand the change in mobility with the length of the threads. The film with the longest threads shows the highest conductivity of ∼12 S/cm and electron mobility of ∼14.3 cm V s for an applied gate voltage of 2 V. The mobility trends with the length seem to be driven mostly by the lower defects in threads, where the loss of electron hopping is less. Furthermore, our results show the mobility trends in stacking-dependent CdSe NPL threads and provide a new insight into fabricating high-mobility TFTs with the use of colloidal CdSe NPLs.
在此，我们报道了一种基于四层胶体CdSe纳米片（NPL）的薄膜晶体管的一维丝状组件的特殊特性。一系列不同长度（200 - 1200 nm）的细丝被用作薄膜晶体管（TFT）中的有源n沟道，以了解迁移率随细丝长度的变化。对于施加的2 V栅极电压，具有最长细丝的薄膜显示出最高的电导率，约为12 S/cm，电子迁移率约为14.3 cm² V⁻¹ s⁻¹。迁移率随长度的变化趋势似乎主要由细丝中较少的缺陷驱动，在这些细丝中电子跳跃的损失较少。此外，我们的结果展示了堆叠相关的CdSe NPL细丝中的迁移率变化趋势，并为使用胶体CdSe NPL制造高迁移率TFT提供了新的见解。
