Shen Ching-Kang, Chaurasiya Rajneesh, Chen Kuan-Ting, Chen Jen-Sue
Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan.
ACS Appl Mater Interfaces. 2022 Apr 13;14(14):16939-16948. doi: 10.1021/acsami.2c03066. Epub 2022 Mar 31.
Brain inspired artificial synapses are highly desirable for neuromorphic computing and are an alternative to a conventional computing system. Here, we report a simple and cost-effective ferroelectric capacitively coupled zinc-tin oxide (ZTO) thin-film transistor (TFT) topped with ferroelectric copolymer poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) for artificial synaptic devices. Ferroelectric dipoles enhance the charge trapping/detrapping effect in ZTO TFT, as confirmed by the transfer curve (-) analysis. This substantiates superior artificial synapse responses in ferroelectric-coupled ZTO TFT because the current potentiation and depression are individually improved. The ferroelectric-coupled ZTO TFT successfully emulates the essential features of the artificial synapse, including pair-pulsed facilitation (PPF) and potentiation/depression (P/D) characteristics. In addition, the device also mimics the memory consolidation behavior through intensified stimulation. This work demonstrates that the ferroelectric-coupled ZTO synaptic transistor possesses great potential as a hardware candidate for neuromorphic computing.
受大脑启发的人工突触对于神经形态计算非常有吸引力，并且是传统计算系统的一种替代方案。在此，我们报道了一种用于人工突触器件的简单且具有成本效益的铁电电容耦合氧化锌锡（ZTO）薄膜晶体管（TFT），其顶部覆盖有铁电共聚物聚（偏二氟乙烯 - 三氟乙烯）（P(VDF-TrFE)）。铁电偶极增强了ZTO TFT中的电荷俘获/去俘获效应，这通过转移曲线（-）分析得到证实。这证实了铁电耦合ZTO TFT中具有卓越的人工突触响应，因为电流增强和抑制分别得到了改善。铁电耦合ZTO TFT成功地模拟了人工突触的基本特征，包括双脉冲易化（PPF）和增强/抑制（P/D）特性。此外，该器件还通过强化刺激模拟了记忆巩固行为。这项工作表明，铁电耦合ZTO突触晶体管作为神经形态计算的硬件候选具有巨大潜力。
