Lin Ting-Ruei, Shih Li-Chung, Cheng Po-Jen, Chen Kuan-Ting, Chen Jen-Sue
Department of Materials Science and Engineering, National Cheng Kung University Tainan 70101 Taiwan
RSC Adv. 2020 Nov 23;10(70):42682-42687. doi: 10.1039/d0ra08777g.
In contrast to the commonly present UV light-stimulated synaptic oxide thin-film transistors, this study demonstrates a violet light (wavelength of 405 nm) stimulated zinc-tin oxide (ZTO) photoelectric transistor for potential application in optical neuromorphic computation. Owing to the light-induced oxygen vacancy ionization and persistent photoconductivity effect in ZTO, this device well imitates prominent synaptic functions, including photonic potentiation, electric depression, and short-term memory (STM) to long-term memory (LTM) transition. A highly linear and broad dynamic range of photonic potentiation can be achieved by modulating the light power density, while electric depression is realized by gate voltage pulsing. In addition, the brain-like re-learning experience with extended forgetting time (200 s) is well mimicked by the ZTO photoelectric transistor. As a result, the ZTO photoelectric transistor provides excessive synaptic function with multi-series of synaptic weight levels (90 levels for each given light power density), which makes it prevalent in the neuromorphic computation of massive data as well as in learning-driven artificial intelligence computation.
与常见的紫外光刺激的突触氧化物薄膜晶体管不同，本研究展示了一种用于光学神经形态计算潜在应用的紫光（波长405nm）刺激的氧化锌锡（ZTO）光电晶体管。由于ZTO中光致氧空位电离和持续光电导效应，该器件很好地模拟了突出的突触功能，包括光子增强、电抑制以及从短期记忆（STM）到长期记忆（LTM）的转变。通过调制光功率密度可实现高度线性且宽动态范围的光子增强，而通过栅极电压脉冲实现电抑制。此外，ZTO光电晶体管很好地模拟了具有延长遗忘时间（200秒）的类脑再学习体验。结果，ZTO光电晶体管提供了具有多系列突触权重水平（每个给定光功率密度有90个水平）的过量突触功能，这使其在海量数据的神经形态计算以及学习驱动的人工智能计算中很普遍。
