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锂在原始和缺陷硅烯上的电荷吸附:一项理论研究。

Charged lithium adsorption on pristine and defective silicene: a theoretical study.

作者信息

Juan Julián, Fernández-Werner Luciana, Bechthold Pablo, Villarreal Julián, Gaztañaga Francisco, Jasen Paula V, Faccio Ricardo, González Estela A

机构信息

Instituto de Física del Sur (IFISUR), Departamento de Física, Universidad Nacional del Sur (UNS), CONICET, Av. L. N. Alem 1253, B8000CPB-Bahía Blanca, Argentina.

Área Física and Centro NanoMat, DETEMA, Facultad de Química, Universidad de la República, Montevideo, Uruguay.

出版信息

J Phys Condens Matter. 2022 Apr 14;34(24). doi: 10.1088/1361-648X/ac630a.

DOI:10.1088/1361-648X/ac630a
PMID:35358960
Abstract

We investigated by first principle calculations the adsorption of Li(= -1, 0 or +1) on a silicene single layer. Pristine and three different defective silicene configurations with and without Li doping were studied: single vacancy (SV), double vacancy (DV) and Stone-Wales (STW). Structural studies and the adsorption energies of various sites were obtained and compared in order to understand the stability of the Li on the surface. Moreover, electronic structure and charge density difference analysis were performed before and after adsorption at the most stables sites, which showed the presence of a magnetic moment in the undoped SV system, the displacement of the Fermi level produced by Li doping and a charge transfer from Li to the surface. Additionally, quantum capacity (QC) and charge density studies were performed on these systems. This analysis showed that the generation of defects and doping improves the QC of silicene in positive bias, because of the existence of 3p orbital in the zone of the defect. Consequently, the innovative calculations performed in this work of charged lithium doping on silicene can be used for future comparison with experimental studies of this Li-ion battery anode material candidate.

摘要

我们通过第一性原理计算研究了Li(= -1、0或+1)在单层硅烯上的吸附情况。研究了原始的以及三种不同的有缺陷和无锂掺杂的硅烯构型:单空位(SV)、双空位(DV)和斯通-威尔士(STW)。获得并比较了各种位点的结构研究结果和吸附能,以了解锂在表面的稳定性。此外,在最稳定的位点进行吸附前后的电子结构和电荷密度差分析,结果表明未掺杂的SV系统中存在磁矩,锂掺杂导致费米能级的位移以及从锂到表面的电荷转移。另外,对这些系统进行了量子电容(QC)和电荷密度研究。该分析表明,由于缺陷区域中存在3p轨道,缺陷的产生和掺杂提高了硅烯在正偏压下的QC。因此,这项关于硅烯上带电锂掺杂的创新性计算可用于未来与这种锂离子电池负极材料候选物的实验研究进行比较。

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