具有反转和正常能带结构的HgCdTe量子阱中的 Rashba 自旋分裂
Rashba Spin Splitting in HgCdTe Quantum Wells with Inverted and Normal Band Structures.
作者信息
Gudina Svetlana V, Neverov Vladimir N, Popov Mikhail R, Turutkin Konstantin V, Podgornykh Sergey M, Shelushinina Nina G, Yakunin Mikhail V, Mikhailov Nikolay N, Dvoretsky Sergey A
机构信息
M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620108 Yekaterinburg, Russia.
A.V. Rzhanov Institute of Semiconductor Physics of Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia.
出版信息
Nanomaterials (Basel). 2022 Apr 6;12(7):1238. doi: 10.3390/nano12071238.
In quantum wells (QWs) formed in HgCdTe/CdHgTe heterosystems with a variable composition of Cd(Hg), Shubnikov-de-Haas (SdH) oscillations are investigated to characterize the Rashba-type spin-orbit coupling in QWs with both a normal and inverted band structure. Several methods of extracting the Rashba spin-splitting at zero magnetic field and their magnetic field dependences from the beatings of SdH oscillations are used for greater reliability. The large and similar Rashba splitting (25-27 meV) is found for different kinds of spectrum, explained by a significant fraction of the p-type wave functions, in both the E1 subband of the sample with a normal spectrum and the H1 subband for the sample with an inverted one.
在具有可变镉（汞）成分的碲镉汞/镉汞碲异质系统中形成的量子阱（QW）中，研究了舒布尼科夫 - 德哈斯（SdH）振荡，以表征具有正常和反转能带结构的量子阱中的 Rashba 型自旋 - 轨道耦合。为了提高可靠性，使用了几种从 SdH 振荡的拍频中提取零磁场下的 Rashba 自旋分裂及其磁场依赖性的方法。在具有正常能带结构的样品的 E1 子带和具有反转能带结构的样品的 H1 子带中，对于不同类型的光谱都发现了大且相似的 Rashba 分裂（25 - 27 毫电子伏特），这可以用 p 型波函数的很大一部分来解释。
Zotero 插件