通过操作原位硬X射线光电子能谱，利用反应分子束外延实时监测Nb掺杂的SrTiO(001)上外延CoFeO超薄膜的生长。

Real-Time Monitoring the Growth of Epitaxial CoFeO Ultrathin Films on Nb-Doped SrTiO(001) via Reactive Molecular Beam Epitaxy by Means of Operando HAXPES.

作者信息

Ruwisch Kevin, Pohlmann Tobias, Bertram Florian, Schlüter Christoph, Gloskovskii Andrei, Küpper Karsten, Wollschläger Joachim

机构信息

Department of Physics, Osnabrück University, 49076 Osnabrück, Germany.

Deutsches Elektronen-Synchrotron (DESY), Photon Science, 22607 Hamburg, Germany.

出版信息

Materials (Basel). 2022 Mar 23;15(7):2377. doi: 10.3390/ma15072377.

DOI:10.3390/ma15072377

PMID:35407710

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8999470/

Abstract

In this work, we present a comprehensive study on real-time monitoring the growth of epitaxial CoFeO thin films grown on SrTiO(001) substrates via reactive molecular beam epitaxy. The growth process was monitored during evaporation by means of time resolved operando hard X-ray photoelectron spectroscopy (HAXPES). We prepared ultrathin ferrite films using different oxygen partial pressures, showing pure metallic, light oxidic, and cobalt ferrite-like growth. Additional X-ray diffraction measurements confirm HAXPES results.

摘要

在这项工作中，我们对通过反应分子束外延在SrTiO(001)衬底上生长的外延CoFeO薄膜的生长进行实时监测展开了全面研究。在蒸发过程中，借助时间分辨操作硬X射线光电子能谱（HAXPES）对生长过程进行了监测。我们使用不同的氧分压制备了超薄铁氧体薄膜，呈现出纯金属态、轻度氧化态以及类钴铁氧体的生长状态。额外的X射线衍射测量证实了HAXPES的结果。