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热压烧结和放电等离子烧结的CeO掺杂AlN陶瓷的电导率对比研究

Comparative Study on Electrical Conductivity of CeO-Doped AlN Ceramics Sintered by Hot-Pressing and Spark Plasma Sintering.

作者信息

Coëffe-Desvaux Mickael, Pradeilles Nicolas, Marchet Pascal, Vandenhende Marion, Joinet Mickael, Maître Alexandre

机构信息

IRCER UMR-CNRS 7315, 87068 Limoges, France.

THALES AVS, 38430 Moirans, France.

出版信息

Materials (Basel). 2022 Mar 24;15(7):2399. doi: 10.3390/ma15072399.

DOI:10.3390/ma15072399
PMID:35407732
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8999955/
Abstract

Aluminum nitride (AlN) ceramics were prepared by both Hot-pressing (HP) and Spark-Plasma-Sintering (SPS) using cerium oxide as the sintering aid. The characterization of AlN raw powder denoted the presence of an amorphous layer that led to the formation of aluminum oxide. During the sintering process, CeO introduced as a sintering aid was reduced into CeO. The latter reacted with aluminum oxide to form a transient liquid phase that promotes sintering by both HP and SPS. A reactional path leading to the formation of secondary phases, such as CeAlO and CeAlO, has been proposed according to the pseudo-binary AlO - CeO. Ceramics obtained from HP and SPS are presented as similar, except for the secondary-phase distribution. The influences of secondary phase composition and distribution on electrical conductivity were evaluated by leakage current measurements. The mechanism of DC conduction and the global conductivity of ceramics were discussed according to the sintering process and the number of secondary phases.

摘要

采用热压（HP）和放电等离子烧结（SPS）两种方法，以氧化铈作为烧结助剂制备了氮化铝（AlN）陶瓷。AlN原料粉末的表征表明存在无定形层，这导致了氧化铝的形成。在烧结过程中，作为烧结助剂引入的CeO被还原为CeO。后者与氧化铝反应形成瞬态液相，通过热压和放电等离子烧结促进烧结。根据准二元AlO - CeO体系，提出了导致CeAlO和CeAlO等第二相形成的反应路径。除了第二相分布外，热压和放电等离子烧结得到的陶瓷表现相似。通过漏电流测量评估了第二相组成和分布对电导率的影响。根据烧结过程和第二相数量讨论了陶瓷的直流传导机制和整体电导率。

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