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用于非掺杂有机发光二极管的热激活延迟荧光发射体的最新进展。

Recent progress in thermally activated delayed fluorescence emitters for nondoped organic light-emitting diodes.

作者信息

Shi Yi-Zhong, Wu Hao, Wang Kai, Yu Jia, Ou Xue-Mei, Zhang Xiao-Hong

机构信息

Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University 199 Ren'ai Road Suzhou Jiangsu 215123 PR China

出版信息

Chem Sci. 2022 Feb 22;13(13):3625-3651. doi: 10.1039/d1sc07180g. eCollection 2022 Mar 30.

Abstract

Nondoped organic light-emitting diodes (OLEDs) have drawn immense attention due to their merits of process simplicity, reduced fabrication cost, To realize high-performance nondoped OLEDs, all electrogenerated excitons should be fully utilized. The thermally activated delayed fluorescence (TADF) mechanism can theoretically realize 100% internal quantum efficiency (IQE) through an effective upconversion process from nonradiative triplet excitons to radiative singlet ones. Nevertheless, exciton quenching, especially related to triplet excitons, is generally very serious in TADF-based nondoped OLEDs, significantly hindering the pace of development. Enormous efforts have been devoted to alleviating the annoying exciton quenching process, and a number of TADF materials for highly efficient nondoped devices have been reported. In this review, we mainly discuss the mechanism, exciton leaking channels, and reported molecular design strategies of TADF emitters for nondoped devices. We further classify their molecular structures depending on the functional A groups and offer an outlook on their future prospects. It is anticipated that this review can entice researchers to recognize the importance of TADF-based nondoped OLEDs and provide a possible guide for their future development.

摘要

非掺杂有机发光二极管(OLED)因其工艺简单、制造成本降低等优点而备受关注。为了实现高性能的非掺杂OLED,所有电致激子都应得到充分利用。热激活延迟荧光(TADF)机制理论上可以通过从非辐射三重态激子到辐射单重态激子的有效上转换过程实现100%的内量子效率(IQE)。然而,在基于TADF的非掺杂OLED中,激子猝灭,尤其是与三重态激子相关的猝灭,通常非常严重,这显著阻碍了其发展步伐。人们已经付出了巨大努力来缓解这种恼人的激子猝灭过程,并且已经报道了许多用于高效非掺杂器件的TADF材料。在这篇综述中,我们主要讨论了用于非掺杂器件的TADF发射体的机制、激子泄漏通道和已报道的分子设计策略。我们根据官能团A对它们的分子结构进行了分类,并对其未来前景进行了展望。预计这篇综述能够促使研究人员认识到基于TADF的非掺杂OLED的重要性,并为其未来发展提供可能的指导。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f220/8966661/3c10754926e9/d1sc07180g-f1.jpg

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