Ju Jia, Fang Mengfei, Shuai Liguo, Yin Kang
Jiangsu Key Laboratory of Advanced Structural Materials and Application Technology, School of Materials Science and Engineering, Nanjing Institute of Technology, Nanjing 211167, China.
Jiangsu Key Laboratory of Hazardous Chemicals Safety and Control, College of Safety Science and Engineering, Nanjing Technology University, Nanjing 210009, China.
Materials (Basel). 2022 Apr 11;15(8):2785. doi: 10.3390/ma15082785.
The wires with chemical composition NiMnGaGdCo were prepared by hot-magnetic drawing and the microstructure evolution characteristics, martensitic transformation and MFIS process were investigated in detail, respectively. The results showed that a multiphase structure with γ phase and martensite was observed in samples when the magnetic field was 0 T to 0.2 T during the hot-magnetic drawing process. With the magnetic field increased to 0.5 T, due to the atomic diffusion by severe thermoplastic deformation and high external magnetic field, a single-phase structure with L1 type twin martensite was found in the sample. Moreover, an obvious increasing trend in martensitic transformation temperature in the sample was found by the enhancement of the magnetic field during the hot-magnetic drawing process. The highest phase transition temperature rose to about 600 °C when the magnetic field reached 0.5 T. Finally, the property of SME and MFIS in the sample can be enhanced by the magnetic field increasing during the hot-magnetic drawing process, excellent performance of SME was obtained at low total strain, and MFIS was achieved at 4.47% at a magnetic field of 8007 Oe in the sample in the 0.5 T magnetic field during the hot-magnetic drawing process.
采用热磁拉伸法制备了化学成分NiMnGaGdCo的线材,并分别详细研究了其微观结构演变特征、马氏体相变和磁控形状记忆效应(MFIS)过程。结果表明,在热磁拉伸过程中,当磁场为0 T至0.2 T时,样品中观察到γ相和马氏体的多相结构。随着磁场增加到0.5 T,由于严重热塑性变形和高外磁场作用下的原子扩散,样品中发现了具有L1型孪晶马氏体的单相结构。此外,通过热磁拉伸过程中磁场的增强,发现样品中的马氏体相变温度有明显的上升趋势。当磁场达到0.5 T时,最高相变温度升至约600℃。最后,通过热磁拉伸过程中磁场的增加,可以提高样品中形状记忆效应(SME)和磁控形状记忆效应(MFIS)的性能,在低总应变下获得了优异的形状记忆效应性能,在热磁拉伸过程中0.5 T磁场下,样品在8007奥斯特的磁场下,应变为4.47%时实现了磁控形状记忆效应。