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在锗和硅衬底上生长的SiGe(001)-2×1的同步辐射光电子能谱研究：不同锗浓度下的表面电子结构

A Synchrotron Radiation Photoemission Study of SiGe(001)-2×1 Grown on Ge and Si Substrates: The Surface Electronic Structure for Various Ge Concentrations.

作者信息

Cheng Yi-Ting, Wan Hsien-Wen, Kwo Jueinai, Hong Minghwei, Pi Tun-Wen

机构信息

Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan.

Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan.

出版信息

Nanomaterials (Basel). 2022 Apr 11;12(8):1309. doi: 10.3390/nano12081309.

DOI:10.3390/nano12081309
PMID:35458017
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9031588/
Abstract

Beyond the macroscopic perspective, this study microscopically investigates SiGe(001)-2×1 samples that were grown on the Ge(001) and Si(001) substrates via molecular-beam epitaxy, using the high-resolution synchrotron radiation photoelectron spectroscopy (SRPES) as a probe. The low-energy electron diffraction equipped in the SRPES chamber showed 2×1 double-domain reconstruction. Analyses of the Ge 3d core-level spectra acquired using different photon energies and emission angles consistently reveal the ordered spots to be in a Ge-Ge tilted configuration, which is similar to that in Ge(001)-2×1. It was further found that the subsurface layer was actually dominated by Ge, which supported the buckled configuration. The Si atoms were first found in the third surface layer. These Si atoms were further divided into two parts, one underneath the Ge-Ge dimer and one between the dimer row. The distinct energy positions of the Si 2p core-level spectrum were caused by stresses, not by charge alternations.

摘要

除了宏观视角外，本研究还通过分子束外延在Ge(001)和Si(001)衬底上生长的SiGe(001)-2×1样品进行了微观研究，使用高分辨率同步辐射光电子能谱（SRPES）作为探针。SRPES腔室中配备的低能电子衍射显示出2×1双畴重构。对使用不同光子能量和发射角获取的Ge 3d芯能级光谱的分析一致表明，有序斑点呈Ge-Ge倾斜构型，这与Ge(001)-2×1中的构型相似。进一步发现，次表层实际上以Ge为主，这支持了弯曲构型。Si原子首先在第三表面层中被发现。这些Si原子进一步分为两部分，一部分在Ge-Ge二聚体下方，一部分在二聚体行之间。Si 2p芯能级光谱中不同的能量位置是由应力引起的，而不是由电荷交替引起的。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f7c9/9031588/7c459259714d/nanomaterials-12-01309-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f7c9/9031588/3a74016afc38/nanomaterials-12-01309-g005.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f7c9/9031588/02ed08674493/nanomaterials-12-01309-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f7c9/9031588/a500a915ab41/nanomaterials-12-01309-g002.jpg
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https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f7c9/9031588/1bac643cf37e/nanomaterials-12-01309-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f7c9/9031588/1ca9172074f0/nanomaterials-12-01309-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f7c9/9031588/605d1dc42fee/nanomaterials-12-01309-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f7c9/9031588/7c459259714d/nanomaterials-12-01309-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f7c9/9031588/3a74016afc38/nanomaterials-12-01309-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f7c9/9031588/4010ba7ca09d/nanomaterials-12-01309-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f7c9/9031588/43e4a0b5f46c/nanomaterials-12-01309-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f7c9/9031588/02ed08674493/nanomaterials-12-01309-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f7c9/9031588/a500a915ab41/nanomaterials-12-01309-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f7c9/9031588/da0ed288ecf0/nanomaterials-12-01309-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f7c9/9031588/1bac643cf37e/nanomaterials-12-01309-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f7c9/9031588/1ca9172074f0/nanomaterials-12-01309-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f7c9/9031588/605d1dc42fee/nanomaterials-12-01309-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f7c9/9031588/7c459259714d/nanomaterials-12-01309-g010.jpg

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Microscopic Views of Atomic and Molecular Oxygen Bonding with Ge(001)-2 × 1 Studied by High-Resolution Synchrotron Radiation Photoemission.通过高分辨率同步辐射光电子能谱研究Ge(001)-2×1表面原子和分子氧键合的微观视图
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