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采用重叠贴片的超宽带窄壁波导到微带过渡。

Ultra-Wideband Narrow Wall Waveguide-to-Microstrip Transition Using Overlapped Patches.

机构信息

School of Telecommunication Engineering, Universitat Politècnica de Catalunya, 08034 Barcelona, Spain.

出版信息

Sensors (Basel). 2022 Apr 12;22(8):2964. doi: 10.3390/s22082964.

Abstract

An ultrawideband rectangular waveguide to microstrip line transition operating at the whole LMDS and Ka band is presented. The transition is based on exciting three overlapped transversal patches that radiate into the narrow wall of the waveguide, making the design feasible to be used in λg/2 spaced phased arrays. Both top-side and bottom-side versions were designed and compared to show their differences. They were validated by means of a manufactured back-to-back (B2B) configuration, with a measured fractional bandwidth of 21.2% (top-side) and 23% (bottom-side). The maximum single transition measured insertion losses were 0.67 dB (top-side) and 0.85 dB (bottom-side) in the whole band of operation.

摘要

提出了一种工作在整个 LMDS 和 Ka 波段的超宽带矩形波导到微带线过渡。该过渡基于激励三个重叠的横向贴片,这些贴片辐射到波导的窄壁,使得设计可用于 λg/2 间隔的相控阵。设计了顶侧和底侧两种版本,并进行了比较,以展示它们的差异。通过制造的背靠背(B2B)配置进行了验证,在整个工作频段内,测量的带宽为 21.2%(顶侧)和 23%(底侧)。在整个工作频段内,测量的最大单个过渡插入损耗分别为 0.67 dB(顶侧)和 0.85 dB(底侧)。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/d7f6/9024930/b1d60499ab3a/sensors-22-02964-g001.jpg

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