Sun Tianyu, Xia Mingjun
Opt Express. 2022 Mar 28;30(7):10293-10305. doi: 10.1364/OE.452580.
We proposed and experimentally demonstrated a low loss modified Bezier bend for silicon and silicon nitride photonic integrated circuits. Both simulation and experimental results confirm that the modified Bezier bend can effectively reduce the bend loss for silicon and silicon nitride platform. At a bend radius of 1 µm, the reduction of bend loss from 0.367 dB/90° of circular bend and 0.35 dB/90° of traditional Bezier bend to 0.117 dB/90° of modified Bezier bend for silicon platform was experimentally demonstrated. For a 12-µm radius silicon nitride bend, the bend loss reduction from 0.65 dB/90° of circular bend and 0.575 dB/90° of traditional Bezier bend to 0.32 dB/90° was achieved. The proposed modified Bezier bend design can also be applied to other material systems, such as InP, LN, GaAs, etc., to effectively reduce the bend waveguide loss.
我们提出并通过实验证明了一种用于硅和氮化硅光子集成电路的低损耗改进型贝塞尔弯曲结构。仿真和实验结果均证实,改进型贝塞尔弯曲结构能够有效降低硅和氮化硅平台的弯曲损耗。在弯曲半径为1 µm时,实验证明了对于硅平台,弯曲损耗从圆形弯曲的0.367 dB/90°和传统贝塞尔弯曲的0.35 dB/90°降低到了改进型贝塞尔弯曲的0.117 dB/90°。对于半径为12 µm的氮化硅弯曲结构,弯曲损耗从圆形弯曲的0.65 dB/90°和传统贝塞尔弯曲的0.575 dB/90°降低到了0.32 dB/90°。所提出的改进型贝塞尔弯曲结构设计也可应用于其他材料系统,如磷化铟、铌酸锂、砷化镓等,以有效降低弯曲波导损耗。