Maryati Yati, Winarsih Suci, Syakuur Muhammad Abdan, Manawan Maykel, Saragi Togar
Department of Physics, Faculty of Mathematics and Natural Sciences, Universitas Padjadjaran, Jl. Raya Bandung-Sumedang Km. 21, Sumedang 45363, West Java, Indonesia.
Faculty of Defense Technology, Indonesia Defense University, Bogor 16810, West Java, Indonesia.
ACS Omega. 2022 Apr 5;7(15):12601-12609. doi: 10.1021/acsomega.1c06161. eCollection 2022 Apr 19.
Electron-doped superconducting cuprate of Eu Ce CuO has been studied in the whole doping regime from = 0.10-0.20 with reducing oxygen content to investigate the relation between the crystal structure and the hopping conduction in the normal state. Parameter of the crystal structure has been extracted from the X-ray diffraction (XRD) measurement while hopping conduction parameters have been obtained from resistivity measurements. The Eu-O bond length decreases with the increasing doping concentration, indicating the successful doping by the partial replacing of Eu with Ce. The resistivity increases with decreasing temperature in all measured samples. This is an indication of bad metal-like behavior in the whole regime in the normal state of electron-doped superconducting cuprate of Eu Ce CuO. The temperature dependence of resistivity was analyzed by the Arrhenius law and the variable range hopping model. It is found that the hopping conduction mechanism more likely follows the variable range hopping rather than the Arrhenius law, indicating that the hopping mechanism occurs in three dimensions. The Cu-O bond length probably plays an important role in decreasing the activation energy. The decreasing value of the activation energy correlates with the increase in the localization radius.
对电子掺杂的Eu Ce CuO超导铜酸盐在从 = 0.10 - 0.20的整个掺杂范围内进行了研究，通过降低氧含量来探究晶体结构与正常态下跳跃传导之间的关系。晶体结构参数是从X射线衍射（XRD）测量中提取的，而跳跃传导参数则是从电阻率测量中获得的。随着掺杂浓度的增加，Eu - O键长减小，这表明通过用Ce部分替代Eu实现了成功掺杂。在所有测量样品中，电阻率随温度降低而增加。这表明在电子掺杂的Eu Ce CuO超导铜酸盐正常态的整个范围内呈现出类似不良金属的行为。通过阿仑尼乌斯定律和变程跳跃模型对电阻率的温度依赖性进行了分析。发现跳跃传导机制更可能遵循变程跳跃而不是阿仑尼乌斯定律，这表明跳跃机制发生在三维空间。Cu - O键长可能在降低活化能方面起着重要作用。活化能的降低值与局域半径的增加相关。
