Kim Ki Seok, Kim Min Seong, Chung Jusung, Kim Dongwoo, Lee I Sak, Kim Hyun Jae
School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea.
LG Display Co., Ltd., 245, LG-ro, Wollong-myeon, Paju-si, Gyeonggi-do 10845, Republic of Korea.
ACS Appl Mater Interfaces. 2022 May 11;14(18):21150-21158. doi: 10.1021/acsami.2c01769. Epub 2022 Apr 28.
We report a transparent and flexible polyimide (PI)-doped single-layer (PSL) phototransistor for the detection of visible light. The PSL was deposited on a SiO gate insulator by a co-sputtering process using amorphous indium-gallium-zinc oxide (IGZO) and PI targets simultaneously. The PSL acted as both a channel layer and a visible-light absorption layer. PI is one of the few flexible organic materials that can be fabricated into sputtering targets. Compared with the IGZO phototransistor without PI doping, the PSL phototransistor exhibited improved optoelectronic characteristics under illumination with 635 nm red light of 1 mW/mm intensity; the obtained photoresponsivity ranged from 15.00 to 575.00 A/W, the photosensitivity from 1.38 × 10 to 9.86 × 10, and the specific detectivity from 1.35 × 10 to 5.83 × 10 Jones. These improvements are attributed to subgap states induced by the PI doping, which formed decomposed organic molecules, oxygen vacancies, and metal hydroxides. Furthermore, a flexible PSL phototransistor was fabricated and showed stable optoelectronic characteristics even after 10,000 bending tests.
我们报道了一种用于检测可见光的透明且柔性的聚酰亚胺（PI）掺杂单层（PSL）光电晶体管。通过同时使用非晶铟镓锌氧化物（IGZO）和PI靶材的共溅射工艺，将PSL沉积在SiO栅极绝缘体上。PSL既作为沟道层又作为可见光吸收层。PI是少数可制成溅射靶材的柔性有机材料之一。与未掺杂PI的IGZO光电晶体管相比，PSL光电晶体管在强度为1 mW/mm的635 nm红光照射下表现出改善的光电特性；获得的光响应度范围为15.00至575.00 A/W，光敏度为1.38×10至9.86×10，比探测率为1.35×10至5.83×10琼斯。这些改善归因于PI掺杂诱导的亚带隙态，其形成了分解的有机分子、氧空位和金属氢氧化物。此外，制备了一种柔性PSL光电晶体管，即使经过10000次弯曲测试，仍表现出稳定的光电特性。
