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通过分子电荷转移掺杂在载流子类型可控的二硒化铂纳米片中增强热电功率因子

Enhanced Thermoelectric Power Factor in Carrier-Type-Controlled Platinum Diselenide Nanosheets by Molecular Charge-Transfer Doping.

作者信息

Youn Seonhye, Kim Jeongmin, Moon Hongjae, Kim Jae-Keun, Jang Juntae, Chang Joonyeon, Lee Takhee, Kang Keehoon, Lee Wooyoung

机构信息

Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemoon-gu, Seoul, 03722, Republic of Korea.

Division of Nanotechnology, DGIST, 333 Techno Jungang-daero, Hyeonpung-eup, Dalseong-gun, Daegu, 42988, Republic of Korea.

出版信息

Small. 2022 Jun;18(23):e2200818. doi: 10.1002/smll.202200818. Epub 2022 Apr 29.

Abstract

2D transition metal dichalcogenides (TMDCs) have revealed great promise for realizing electronics at the nanoscale. Despite significant interests that have emerged for their thermoelectric applications due to their predicted high thermoelectric figure of merit, suitable doping methods to improve and optimize the thermoelectric power factor of TMDCs have not been studied extensively. In this respect, molecular charge-transfer doping is utilized effectively in TMDC-based nanoelectronic devices due to its facile and controllable nature owing to a diverse range of molecular designs available for modulating the degree of charge transfer. In this study, the power of molecular charge-transfer doping is demonstrated in controlling the carrier-type (n- and p-type) and thermoelectric power factor in platinum diselenide (PtSe ) nanosheets. This, combined with the tunability in the band overlap by changing the thickness of the nanosheets, allows a significant increase in the thermoelectric power factor of the n- and p-doped PtSe nanosheets to values as high as 160 and 250 µW mK , respectively. The methodology employed in this study provides a simple and effective route for the molecular doping of TMDCs that can be used for the design and development of highly efficient thermoelectric energy conversion systems.

摘要

二维过渡金属二硫属化物(TMDCs)在实现纳米级电子器件方面展现出了巨大潜力。尽管由于其预测的高热电优值,人们对其热电应用产生了浓厚兴趣,但尚未对用于改善和优化TMDCs热电功率因子的合适掺杂方法进行广泛研究。在这方面,分子电荷转移掺杂因其易于操作且可控的特性,在基于TMDCs的纳米电子器件中得到了有效应用,这得益于可用于调节电荷转移程度的多种分子设计。在本研究中,分子电荷转移掺杂在控制二硒化铂(PtSe₂)纳米片中的载流子类型(n型和p型)及热电功率因子方面展现出了强大作用。这与通过改变纳米片厚度实现的能带重叠可调性相结合,使得n型和p型掺杂的PtSe₂纳米片的热电功率因子分别显著提高至高达160和250 μW m⁻¹K⁻²的值。本研究中采用的方法为TMDCs的分子掺杂提供了一条简单有效的途径,可用于设计和开发高效的热电能量转换系统。

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