二硫化铟（InS）薄膜的新制备方法。

New fabrication method for di-indium tri-sulfuric (InS) thin films.

作者信息

Ali Ahmed I, Ibrahim Medhat, Hassen A

机构信息

Basic Science Department, Faculty of Technology and Education, Helwan University, Cairo, 11281, Egypt.

Nanotechnology Research Center (NTRC), British University in Egypt (BUE), Elshrok-City, 11837, Cairo, Egypt.

出版信息

Sci Rep. 2022 Apr 29;12(1):7033. doi: 10.1038/s41598-022-11107-w.

DOI:10.1038/s41598-022-11107-w

PMID:35487954

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9055042/

Abstract

Di-indium tri-sulfuric (InS) thin films are fabricated with annealing indium thin films in a sulfur environment. The effect of both annealing temperature and pressure on the structure, morphology, Raman, and photoluminescence (PL) spectroscopy has been studied. The X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) of the prepared thin films showed different structural phases and morphology with varying annealing temperature and pressure. Energy dispersive X-ray (EDX) analysis confirmed the chemical composition and the atomic ratio of In/S for the InS thin films. The optimum annealing conditions of InS thin films are 550 °C and 100 Torr. The outcome results revealed a new good growth method for InS thin films to be used for different applications.

摘要

通过在硫环境中对铟薄膜进行退火制备了二铟三硫化物（InS）薄膜。研究了退火温度和压力对其结构、形貌、拉曼光谱和光致发光（PL）光谱的影响。所制备薄膜的X射线衍射（XRD）和场发射扫描电子显微镜（FE-SEM）显示，随着退火温度和压力的变化，薄膜呈现出不同的结构相和形貌。能量色散X射线（EDX）分析证实了InS薄膜的化学成分和In/S的原子比。InS薄膜的最佳退火条件为550°C和100托。结果揭示了一种用于不同应用的InS薄膜的良好新生长方法。