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通过在介孔二氧化硅通道中共掺杂碱金属离子对ZnSiO:Mn纳米晶体进行结构设计,以提高发射效率并缩短衰减时间。

Structural designing of ZnSiO:Mn nanocrystals by co-doping of alkali metal ions in mesoporous silica channels for enhanced emission efficiency with short decay time.

作者信息

Tripathi Neeti, Akai Tomoko

机构信息

Nanomaterials Research Institute (NMRI), National Institute of Advanced Industrial Science and Technology (AIST) Kansai Center, 1-8-31 Midorigaoka Ikeda Osaka 563-8577 Japan

出版信息

RSC Adv. 2021 Nov 11;11(57):36348-36353. doi: 10.1039/d1ra05515a. eCollection 2021 Nov 4.

Abstract

High purity ZnSiO:Mn crystals were synthesized by impregnating a precursor solution into mesoporous silica followed by sintering process. The effects of doping alkali metal ions (Li, Na, K) on the structural, morphological and photoluminescence properties were investigated. Formation of single phase α-ZnSiO:Mn crystals was confirmed from X-ray diffraction. The crystal size was significantly decreased from 54 nm to 35 nm with increasing molar concentration of alkali metal ion dopants in ZnSiO:Mn. ZnSiO:Mn crystals co-doped with alkali metal ions showed stronger emission and faster decay times compared to the un-doped ZnSiO:Mn phosphor. The highest emission quantum yields (EQEs) of 68.3% at 254 and 3.8% at 425 nm were obtained for the K ion doped samples with Mn : K ratio of ∼1 : 1. With alkali metal ions (Li, Na, K) co-doping, the decay time of ZnSiO:Mn crystals was shortened to ∼4 ms, whereas the emission intensity was elevated, with respect to un-doped ZnSiO:Mn crystals. ZnSiO:Mn crystal growth in silica pores together with selective doping with alkali metal ions paves a way forward to shorten the phosphor response time, without compromising emission efficiency.

摘要

通过将前驱体溶液浸渍到介孔二氧化硅中,然后进行烧结过程,合成了高纯度的ZnSiO:Mn晶体。研究了掺杂碱金属离子(Li、Na、K)对其结构、形态和光致发光性能的影响。通过X射线衍射确认形成了单相α-ZnSiO:Mn晶体。随着ZnSiO:Mn中碱金属离子掺杂剂摩尔浓度的增加,晶体尺寸从54nm显著减小到35nm。与未掺杂的ZnSiO:Mn荧光粉相比,共掺杂碱金属离子的ZnSiO:Mn晶体表现出更强的发射和更快的衰减时间。对于Mn:K比约为1:1的K离子掺杂样品,在254nm处获得了最高68.3%的发射量子产率(EQEs),在425nm处为3.8%。通过碱金属离子(Li、Na、K)共掺杂,ZnSiO:Mn晶体的衰减时间缩短至约4ms,而发射强度相对于未掺杂的ZnSiO:Mn晶体有所提高。在二氧化硅孔中生长ZnSiO:Mn晶体并与碱金属离子进行选择性掺杂,为缩短荧光粉响应时间开辟了一条道路,同时不影响发射效率。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2a3f/9043469/e98ec62f5bd3/d1ra05515a-f1.jpg

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