Yuan Shuai, Qiu Bocang, Amina Koshayeva, Li Lan, Zhai Peichen, Su Ying, Xue Tao, Jiang Tao, Ding Liping, Wei Guodong
Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an, Shaanxi 710021, People's Republic of China.
Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo, Zhejiang 315211, People's Republic of China.
ACS Appl Mater Interfaces. 2022 May 11;14(18):21242-21252. doi: 10.1021/acsami.2c03667. Epub 2022 May 2.
Two-dimensional (2D) black phosphorus (BP) materials, as the most promising building blocks for the development of artificial synapses, have attracted more and more attention. However, the instability of exfoliated 2D BP structures still remains a problem in the development of artificial synapse devices. In this study, the robust and low-power-consumption artificial-synaptic-based BP was successfully manufactured. The synapse devices have high stability in the air atmosphere and do not show obvious degradation over 3 months. The obtained devices not only implement the main function of synapses but also perform the function of dendritic neural synapses and simple logical operations, revealing their very strong learning behavior. The high mobility of 2D BP as well as the coupled effect and quantum confinement effect of the graphene oxide quantum dot (GOQD) can greatly boost the performance of BP-based synapse devices, such as low power consumption (62 pW) and high sensitivity (ultrasmall stimuli at an amplitude of -20 mV). Moreover, benefiting from the GOQD and the interaction between BP and graphene, the main dominated mechanism of the BP-graphene synapse device can be the capture and release of electrons by the 2D BP and GOQD instead of the conductive filament.
二维（2D）黑磷（BP）材料作为人工突触发展中最具潜力的构建块，已受到越来越多的关注。然而，剥落的二维BP结构的不稳定性在人工突触器件的发展中仍然是一个问题。在本研究中，成功制造了基于BP的坚固且低功耗的人工突触。该突触器件在空气气氛中具有高稳定性，并且在3个月内没有表现出明显的降解。所获得的器件不仅实现了突触的主要功能，还执行了树突状神经突触和简单逻辑运算的功能，揭示了它们非常强的学习行为。二维BP的高迁移率以及氧化石墨烯量子点（GOQD）的耦合效应和量子限制效应可以极大地提高基于BP的突触器件的性能，例如低功耗（62 pW）和高灵敏度（-20 mV幅度的超小刺激）。此外，受益于GOQD以及BP与石墨烯之间的相互作用，BP-石墨烯突触器件的主要主导机制可以是二维BP和GOQD对电子的捕获和释放，而不是导电细丝。
