Gupta Nitish Kumar, Srinivasu Sapireddy, Tiwari Anjani Kumar, Wanare Harshawardhan, Ramakrishna S Anantha
Centre for Lasers & Photonics, Indian Institute of Technology Kanpur, Kanpur, 208016, India.
Department of Physics, Indian Institute of Technology Roorkee, Roorkee, 247667, India.
Sci Rep. 2022 May 5;12(1):7400. doi: 10.1038/s41598-022-11410-6.
Explorations into the photonic analogs of topological materials have garnered significant research interest due to their application potential. Particularly in planar systems, the prospects of engendering extinguishable topological states can have wide-ranging implications. With an objective of employing these concepts for thermal emission engineering, here, we design and numerically investigate a quasi-monochromatic highly directional mid-infrared source elicited from inversion symmetry-protected topological interface states. Notably, by relying on the architecture of electro-optic effect-induced topological phase transitions, we introduce the possibility of ultrafast switching of thermal radiation. These reversible phase transitions, being free from carrier transport are inherently fast and evoke thermal emission modulation with a modulation depth upto 0.99. Specifically, our platform exhibits a near-perfect extinguishable spectral emission peak at [Formula: see text]m with a quality factor of over 18500, displaying negligible parasitic emissions. Furthermore, the optimized interface state manifests itself for only one of the polarization modes, resulting in polarized emission under resonance conditions. To establish a methodical approach to parameter optimization, we also model our platform as a leaky mode resonator using the framework of temporal coupled-mode theory. We believe, our findings can provide a way forward in establishing complete control over the optical characteristics of the infrared thermal emitters.
由于其应用潜力,对拓扑材料的光子类似物的探索已引起了重大的研究兴趣。特别是在平面系统中,产生可熄灭拓扑态的前景可能具有广泛的影响。为了将这些概念应用于热发射工程,在此,我们设计并数值研究了一种由反演对称性保护的拓扑界面态引发的准单色高定向中红外源。值得注意的是,通过依赖电光效应诱导的拓扑相变结构,我们引入了热辐射超快切换的可能性。这些可逆相变,无需载流子传输,本质上速度很快,并能实现高达0.99的调制深度的热发射调制。具体而言,我们的平台在[公式:见正文]μm处呈现出近乎完美的可熄灭光谱发射峰,品质因数超过18500,寄生发射可忽略不计。此外,优化后的界面态仅在一种偏振模式下表现出来,从而在共振条件下产生偏振发射。为了建立一种系统的参数优化方法,我们还使用时间耦合模理论框架将我们的平台建模为一个泄漏模谐振器。我们相信,我们的发现可以为全面控制红外热发射器的光学特性提供一条前进的道路。