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对1,4-二氮杂双环[2.2.2]辛烷与THX之间四元键取代效应的系统研究。

Systematic study of the substitution effect on the tetrel bond between 1,4-diazabicyclo[2.2.2]octane and THX.

作者信息

Hou Mingchang, Jin Kunyu, Li Qingzhong, Liu Shufeng

机构信息

The Laboratory of Theoretical and Computational Chemistry, School of Chemistry and Chemical Engineering, Yantai University Yantai 264005 People's Republic of China

Shandong Key Laboratory of Biochemical Analysis, College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology Qingdao 266042 PR China.

出版信息

RSC Adv. 2019 Jun 11;9(32):18459-18466. doi: 10.1039/c9ra03351c. eCollection 2019 Jun 10.

Abstract

A tetrel bond was characterized in the complexes of 1,4-diazabicyclo[2.2.2]octane (DABCO) with THX (T = C, Si, Ge; X= -Me, -H, -OH, -NH, -F, -Cl, -Br, -I, -CN, -NO). DABCO engages in a weak tetrel bond with CHX but a stronger one with SiHX and GeHX. SiHX is favorable to bind with DABCO relative to GeHX, inconsistent with the magnitude of the σ-hole on the tetrel atom. The methyl group in the tetrel donor weakens the tetrel bond but an enhancing effect is found for the other substituents, particularly -NO. The substitution effect is also related to the nature of the tetrel atom. The halogen substitution from F to I has a weakening effect in the CHX complex but an enhancing effect in the SiHX complex and a negligible effect in the GeHX complex. The above abnormal results found in these complexes can be partly attributed to the charge transfer from the lone pair on the nitrogen atom of DABCO into the anti-bonding orbital σ*(T-X) of THX. The stability of both SiHX and GeHX complexes is primarily controlled by electrostatic interactions and polarization.

摘要

在1,4 - 二氮杂双环[2.2.2]辛烷(DABCO)与THX(T = C、Si、Ge;X = -Me、-H、-OH、-NH、-F、-Cl、-Br、-I、-CN、-NO)的配合物中表征了一种四元键。DABCO与CHX形成弱四元键,但与SiHX和GeHX形成更强的四元键。相对于GeHX,SiHX更有利于与DABCO结合,这与四元原子上σ-空穴的大小不一致。四元供体中的甲基会削弱四元键,但发现其他取代基,特别是 -NO,具有增强作用。取代效应也与四元原子的性质有关。从F到I的卤素取代在CHX配合物中有削弱作用,但在SiHX配合物中有增强作用,而在GeHX配合物中作用可忽略不计。在这些配合物中发现的上述异常结果部分可归因于DABCO氮原子上的孤对电子向THX的反键轨道σ*(T - X)的电荷转移。SiHX和GeHX配合物的稳定性主要由静电相互作用和极化作用控制。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6507/9064731/cead071ebb22/c9ra03351c-f1.jpg

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