Kansara Shivam, Sonvane Yogesh, Gajjar P N, Gupta Sanjeev K
Department of Physics, SMMPISR Kadi Sarva Vishwavidyalaya Gandhinagar 382015 India
Advanced Materials Lab, Department of Applied Physics, S.V. National Institute of Technology Surat 395007 India
RSC Adv. 2020 Jul 17;10(45):26804-26812. doi: 10.1039/d0ra03599h. eCollection 2020 Jul 15.
Recently, the two-dimensional (2D) material beryllium diphosphide (BeP) has attracted significant attention for potential device applications due to its Dirac semimetal state, dynamic and thermal stability, and high carrier mobility. In this work, we investigated its electronic and optical properties under biaxial Lagrangian strain using density functional theory (DFT). Electronic band gaps and effective charge carrier mass were highly sensitive to the Lagrangian strain of BeP monolayer. The bandgaps of BeP varied from 0 eV to 0.30 eV for 2% to 8% strain, where the strain range is based on the final stable condition of the system. The absorption spectra for the dielectric properties show the highest absorption peaks in the infrared (IR) region. These abundant strain-dependent studies of the BeP monolayer provide guidelines for its application in infrared sensors and devices.
最近,二维材料二磷化铍(BeP)因其狄拉克半金属态、动态和热稳定性以及高载流子迁移率,在潜在的器件应用方面引起了广泛关注。在这项工作中,我们使用密度泛函理论(DFT)研究了其在双轴拉格朗日应变下的电子和光学性质。电子带隙和有效电荷载流子质量对BeP单层的拉格朗日应变高度敏感。对于2%至8%的应变,BeP的带隙从0电子伏特变化到0.30电子伏特,其中应变范围基于系统的最终稳定状态。介电特性的吸收光谱在红外(IR)区域显示出最高吸收峰。这些对BeP单层丰富的应变相关研究为其在红外传感器和器件中的应用提供了指导。